NSBC114TDP6T5G

DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Base Part Number:	NSBC1*
Supplier Device Package:	SOT-963
Package / Case:	SOT-963
Mounting Type:	Surface Mount
Power - Max:	339mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Series:	--
Resistor - Emitter Base (R2):	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NSBC114TDP6T5G belongs to the Pre-Biased Arrays of Bipolar Junction Transistors (BJT) family. This type of device is designed to offer flexibility, with pre-biased current, yet keep the advantages of using a common package.NSBC114TDP6T5G is usually used in high-efficiency switching regulator circuits, adapter, linear regulator circuit, DC-DC converters, and power management circuits. Its short propagation delay and low input capacitance allow it to operate at higher frequencies, thereby extending its operational range.The basic operation of the NSBC114TDP6T5G is to draw a certain current from both the collector and the emitter of the transistor. This current is determined by the voltage across the emitter base junction of the device and is known as the "current gain" of the device. The current gain typically ranges from 10 to 100, depending on the type of BJT and the operating conditions.The current gain can be used to control the output power of the device. When the voltage across the emitter-base junction becomes greater than the predetermined current gain, more current is drawn from the emitter, which in turn increases the output power of the device. On the other hand, when the voltage across the emitter-base junction becomes less than the predetermined current gain, less current is drawn from the emitter, which in turn, decreases the output power of the device.The advantages of using the NSBC114TDP6T5G include its wide operating voltage range, low power consumption, low cost and small form factor. Its high-speed switching ability, in addition to its pre-biased current, allows for the device to be used in a wide variety of applications.The working principle of NSBC114TDP6T5G is based on the bipolar junction transistor. In a BJT, the current flow is mainly dependent on the voltage applied between its base and emitter electrodes. When a positive voltage is applied to the base, a small current flows through the emitter, as the voltage increase on the emitter-base junction it will start to draw more current causing the collector current to increase.The current gain of the device is dependent on the ratio of the emitter resistor to the base resistor (Rb/Re). When the current gain is low (Rb > Re), the device acts as a current source, and the collector current will be relatively small. When the current gain is high (Rb < Re), the device acts as a saturated switch and the collector current will be relatively high.NSBC114TDP6T5G possesses an unrivaled combination of features including extended temperature range, low power consumption, high-speed switching, wide operating voltage range, low cost and small form factor, which make it well-suited to a wide range of applications including adapter, linear regulator circuits, DC-DC converters, high-efficiency switching regulator circuits, and power management circuits. This device is ideal for use in applications that require a low-power device with high-speed switching capabilities and a wide operating voltage range.

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