| Allicdata Part #: | NSBC144EPDXV6T5OS-ND |
| Manufacturer Part#: |
NSBC144EPDXV6T5 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS NPN/PNP SOT563 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
| DataSheet: |  NSBC144EPDXV6T5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Base Part Number: | NSBC1* |
| Supplier Device Package: | SOT-563 |
| Package / Case: | SOT-563, SOT-666 |
| Mounting Type: | Surface Mount |
| Power - Max: | 500mW |
| Frequency - Transition: | -- |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 47 kOhms |
| Resistor - Base (R1): | 47 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The NSBC144EPDXV6T5 is a pre-biased array of transistors, specifically bipolar junction transistors (BJTs). This type of transistor is a kind of semiconductor device that works as a switch or amplifier and is often used to control current, power, and signal flows between circuits. The NSBC144EPDXV6T5 is pre-biased, which means that it is configured to off when power is applied. This makes it useful for controlling current and power flows in circuits.
The NSBC144EPDXV6T5 is an array of Aluminum Nitride (AlN) transistors that has a NPN configuration. It offers a rugged and reliable package for operation in harsh environments. The device has an operating temperature range of -55°C to +125°C, an operating voltage range of -50V to +130V, and a maximum current gain of 2.5.
The NSBC144EPDXV6T5 offers a variety of application fields. Due to its rugged and reliable package, it is suitable for industrial and automotive applications. It is also used in audio amplification, automotive ecu power switches, mobile phones, and other applications that require small profile, high breakdown voltage, and high current control.
The working principle of the NSBC144EPDXV6T5 is based on the behavior of electrons in a semiconductor material, such as silicon or germanium. In a BJT, the electrons are confined to a region within a semiconductor material known as the depletion region. When the base-emitter diode receives a current, the electrons flow from the emitter to the base, creating a current gain in the transistor. The current gain is determined by the ratio of the base current to the collector current and is known as the “beta” value. The beta value of the NSBC144EPDXV6T5 is 2.5.
The NSBC144EPDXV6T5 is a type of pre-biased array of transistors, specifically bipolar junction transistors (BJTs). They offer a rugged and reliable package and are suitable for a variety of applications. The device is pre-biased, meaning it is configured to off when power is applied. The working principle is based on the behavior of electrons in a semiconductor material, such as silicon or germanium. When the base-emitter diode receives a current, the electrons flow from the emitter to the base, creating a current gain in the transistor. The current gain is determined by the ratio of the base current to the collector current, and the maximum current gain for the NSBC144EPDXV6T5 is 2.5.
The specific data is subject to PDF, and the above content is for reference
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