NSBC114EDXV6T1G Allicdata Electronics

NSBC114EDXV6T1G Discrete Semiconductor Products

Allicdata Part #:

NSBC114EDXV6T1GOSTR-ND

Manufacturer Part#:

NSBC114EDXV6T1G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: NSBC114EDXV6T1G datasheetNSBC114EDXV6T1G Datasheet/PDF
Quantity: 8000
4000 +: $ 0.04869
8000 +: $ 0.04382
12000 +: $ 0.03895
28000 +: $ 0.03651
Stock 8000Can Ship Immediately
$ 0.06
Specifications
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Base Part Number: NSBC1*
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Description

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The NSBC114EDXV6T1G is a device falling into the Transistors - Bipolar (BJT) - Arrays, Pre-Biased category. This device offers a variety of features and is commonly used in a wide range of applications. This document will detail the application field and working principle of the NSBC114EDXV6T1G.

The NSBC114EDXV6T1G is a seven-input transistor array typically used to drive multiple high-current or broadband applications. It can be adapted to a variety of different applications which require multiple high-current or broadband signals, such as digital motor drives, medical equipment and air-conditioning systems. The device combines low power, low on-resistance and excellent thermal dissipation, allowing efficient power management.

The device is manufactured using a process of junction isolation that enables high on-resistance performance with low standoff voltages between the different transistors, which means that it can be used for driving high-current loads. The device also offers excellent thermal performance, as it is able to dissipate heat quickly from the heat source and can be used in applications where heat dissipation is a critical factor. Additionally, the device has much lower power consumption than traditional bipolar transistors, making it more energy efficient. The device also features a high-gain current mirror, which improves the performance of the device in operation.

The NSBC114EDXV6T1G works in a very simple manner. It is composed of seven individual transistors which are all connected in parallel. Each of these transistors is connected to a gate or a base and to the load. When a signal is applied to the gate or base of the transistor, there will be a current flow through the load, as determined by the voltage of the gate or base. The amount of current that is allowed to flow through the load can be controlled by adjusting the voltage of the gate or base. The device also includes a high-gain current mirror, which helps to improve performance in operation.

The NSBC114EDXV6T1G is suitable for a variety of applications where multiple signals are needed and power consumption is a critical factor. It can be used in medical equipment, digital motor drives, air-conditioning systems, LED lighting, and many other applications. The device has been designed to provide high-current and broadband signals while using low power and excellent thermal dissipation, making it an ideal choice for power management applications.

The specific data is subject to PDF, and the above content is for reference

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