Allicdata Part #: | NSBC124EPDXV6OSTR-ND |
Manufacturer Part#: |
NSBC124EPDXV6T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSBC124EPDXV6T1 Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Base Part Number: | NSBC1* |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSBC124EPDXV6T1 is a multi-chip discrete transistor pre-biased array specifically designed for general purpose amplifier applications. It is a step-up inputable device, which is ideal for signal amplification and buffering. It has a maximum power dissipation of 5 Watts, and a wide temperature range from -55°C to +125°C. It is constructed from four transistors, each consists of two NPN transistors connected in a Darlington configuration. A built-in current limitation circuit is present in the array, which helps protect the device from over-current situations. The NSBC124EPDXV6T1 is an ideal device for signal amplification that does not require the user to make biasing adjustments, as the necessary biasing is already preset in the array.The NSBC124EPDXV6T1 uses the pre-biased structure to increase the overall efficiencies of the device by reducing the time required to adjust the I-V (Input-Volt) biasing of the transistors and to provide extra protection when in use. The VBE (Voltage Base to Emitter) of the NPN transistors within the array are controlled via a resistive network, and the I-V curves of the transistors are pre-set. This reduces the time required for circuit-designers and integrators to adjust the I-V biasing of the transistors, allowing for quicker, more accurate circuit creation.The NSBC124EPDXV6T1 also features a wide upper and lower power supply voltage range (3.3V - 18V). It operates with a variety of input voltages and current levels with no distortion, even in extreme conditions such as heavy load and high temperatures. The array is designed for optimum gain and stability at low, medium and high frequencies, allowing it to be used in many different applications.In terms of applications, the NSBC124EPDXV6T1 can be used in many devices, such as loudspeakers, CD players, VCRs, video recorders, professional amplifiers, professional PA systems and other locations where signal amplification is necessary. It can also be used in many other electronics and industrial products due to its flexible, low noise, low distortion and high current characteristics.To summarize, the NSBC124EPDXV6T1 is an ideal device for general purpose amplifier applications. It is constructed from four transistors, each made up of two NPN transistors connected in Darlington configuration and is able to operate over a wide temperature range. It is pre-biased, which eliminates the need to manually adjust the I-V biasing of the transistors, and features a wide upper and lower power supply voltage range of 3.3V-18V. This makes it ideal for device applications, such as loudspeakers, CD players, VCRs, etc.
The specific data is subject to PDF, and the above content is for reference
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