NSBC114EDP6T5G Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 10V
Base Part Number:	NSBC1*
Supplier Device Package:	SOT-963
Package / Case:	SOT-963
Mounting Type:	Surface Mount
Power - Max:	408mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	10 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NSBC114EDP6T5G Application Field & Working Principle

NSBC114EDP6T5G is a high-performance, low-voltage array of NPN transistors manufactured by NEC-Japan. Used in analog and digital circuits, NSBC114EDP6T5G is a pre-biased (PNP/NPN) transistor array with low-power dissipation and high-frequency characteristics. This type of transistor array is designed for a wide variety of applications including high-frequency, low-power and high-speed digital designs and circuits. Its features include high current gain, low-velocity saturation, high voltage breakdown and high-frequency operation. The NSBC114EDP6T5G is suitable for a wide range of applications such as audio amplifiers, digital signal processing, and optical switches. The NSBC114EDP6T5G is an NPN (negative-positive-negative) bipolar junction transistor (BJT) array. This type of transistor array consists of an array of NPN transistors coupled together for amplification and switching purposes. It also consists of diodes and resistors that are used to control the current and voltage flow. In order for the transistor to function properly, the NPN transistor array needs to be biased. This is done by connecting the source and gate terminals of the transistor array to the appropriate voltages. The voltage difference between the source and the gate determines the amount of current that flows through the transistor array. By controlling the voltage difference, the transistor can be biased to a specific level and can be used to amplify or switch signals.The NSBC114EDP6T5G also features a pre-biased structure. This type of structure has a built-in bias voltage which helps to achieve better current gain and dynamic characteristics. The pre-biased structure also helps to reduce the noise generated by the transistor array.The NSBC114EDP6T5G features a wide operational range. It is rated for an extended operating voltage range of 3.2 to 5.5V and can support up to 1A of continuous current. It can also operate at high temperatures of up to 175°C. This makes the NSBC114EDP6T5G suitable for low-voltage and high-temperature applications.The NSBC114EDP6T5G is a very versatile device and can be used in a variety of applications. It can be used in audio amplifiers, digital signal processing, optical switches, and high-frequency circuits. Its low-power dissipation and high-frequency characteristics make it suitable for battery-powered and portable devices. The NSBC114EDP6T5G is an excellent choice for designers looking for a reliable and efficient transistor array. Its excellent performance, low power dissipation, and wide operating range make it an ideal choice for a variety of applications.

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