| Allicdata Part #: | NSBC123EPDXV6T1GOS-ND |
| Manufacturer Part#: |
NSBC123EPDXV6T1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS NPN/PNP SOT563 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
| DataSheet: | NSBC123EPDXV6T1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 5mA, 10V |
| Base Part Number: | NSBC1* |
| Supplier Device Package: | SOT-563 |
| Package / Case: | SOT-563, SOT-666 |
| Mounting Type: | Surface Mount |
| Power - Max: | 500mW |
| Frequency - Transition: | -- |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 2.2 kOhms |
| Resistor - Base (R1): | 2.2 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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Transistors are fundamental components of integrated circuits, or ICs, used to control and switch electrical signals. The NSBC123EPDXV6T1G is a type of pre-biased transistor array, or integrated circuit specifically designed for bipolar junction transistors (BJT). This transistor array is very compact and rugged, making it suitable for applications such as automotive sensors, gate drivers, instrumentation, power management solutions, and general-purpose switches.
The NSBC123EPDXV6T1G is a type of integrated circuit (IC) consisting of multiple bipolar transistors. Each of these transistors is individually isolated to ensure it operates at the same voltage level. The transistors are pre-biased, meaning the voltages associated with their drain and source electrodes have already been set. This enables a more stable current flow and makes it easier to precisely control the transistor’s operation.
The NSBC123EPDXV6T1G is a very low voltage pre-biased transistor array with very low power consumption. It works by reducing the current flow through its drain and source electrodes with differential voltage. The voltage drop between the two electrodes is directly proportional to the current flow, allowing for precise control. The NSBC123EPDXV6T1G also incorporates state-of-the-art protection features, making it exceptionally reliable and efficient.
The NSBC123EPDXV6T1G can be used in a wide variety of applications such as automotive sensors, gate drivers, instrumentation, power management solutions, and general-purpose switches. It is ideal for automotive applications due to its low voltage and power consumption, making it suitable for vehicles with restricted electrical supply. The NSBC123EPDXV6T1G is also suitable for industrial and consumer applications, due to its easy-use feature set and low cost of ownership.
In conclusion, the NSBC123EPDXV6T1G is a versatile, high-performance pre-biased transistor array. It is an extremely power efficient integrated circuit, allowing for precise control of current flow. The NSBC123EPDXV6T1G provides excellent reliability and can be used in a wide variety of applications, making it one of the most sought after transistor arrays.
The specific data is subject to PDF, and the above content is for reference
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NSBC123EPDXV6T1G Datasheet/PDF