NSBC124EPDXV6T1G Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Base Part Number:	NSBC1*
Supplier Device Package:	SOT-563
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Power - Max:	500mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	22 kOhms
Resistor - Base (R1):	22 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The NSBC124EPDXV6T1G is a transistor array which is pre-biased, and so can be used in a variety of applications. This transistor array is specifically meant for use in low power applications, as it is low voltage and low frequency. It is built using a bipolar junction transistor (BJT) architecture which is capable of providing excellent switching speed and high accuracy. The array is also known for its low noise output as well as low power dissipation.The NSBC124EPDXV6T1G consists of four transistors, each of which is N-channel and has self-biasing capability. The transistor array is designed such that each transistor is capable of handling up to 8 A of current, and so it is well suited for applications that require high current handling and/or low power dissipation. All of the transistors are of identical size, which ensures that the entire transistor array has a uniform switching behavior. The transistor array also features a low voltage drop-out voltage which enables it to be used in applications that require a low operating voltage.The working principle of the NSBC124EPDXV6T1G is simple; each of the 4 transistors is individually biased using an integrated voltage divider. This bias voltage allows the transistors to be switched on and off, depending on the load conditions in the application. When the voltage is applied to the drain, the transistors conduct, whereas when it is not, the transistors are able to hold off the current.The NSBC124EPDXV6T1G is primarily used in applications that require low power consumption and low voltage. Examples of such applications include power management systems, switching DC-DC converters, automotive systems and automotive control systems. It can also be used in home and commercial lighting fixtures, such as LED lighting, as it has low power dissipation.The NSBC124EPDXV6T1G is well suited for applications that require high accuracy and/or high switching speed. The low noise output of the array makes it an attractive choice for use in audio applications. It is also ideal for applications that require a uniform switching behavior as the transistor array is designed to have transistors of the same size. Finally, it can also be used in applications that require fast switching times and/or high power handling.In conclusion, the NSBC124EPDXV6T1G is a transistor array which is pre-biased, and is suitable for use in low power applications. It is built using a bipolar junction transistor (BJT) architecture which is capable of providing excellent switching speed and high accuracy. The array is also known for its low noise output as well as low power dissipation. It is primarily used in applications that require low power consumption and a low working voltage, and also has applications in home and commercial lighting systems, audio applications, and for applications that require high accuracy and/or high switching speed.

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