NSVBSS63LT1G Discrete Semiconductor Products |
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| Allicdata Part #: | NSVBSS63LT1GOSTR-ND |
| Manufacturer Part#: |
NSVBSS63LT1G |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 100V 0.1A SOT-23 |
| More Detail: | Bipolar (BJT) Transistor PNP 100V 100mA 95MHz 225m... |
| DataSheet: | NSVBSS63LT1G Datasheet/PDF |
| Quantity: | 9000 |
| 1 +: | $ 0.04000 |
| 10 +: | $ 0.03880 |
| 100 +: | $ 0.03800 |
| 1000 +: | $ 0.03720 |
| 10000 +: | $ 0.03600 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 2.5mA, 25mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 25mA, 1V |
| Power - Max: | 225mW |
| Frequency - Transition: | 95MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
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The NSVBSS63LT1G is a single bipolar junction transistor (BJT) that is widely used for its wide variety of commercial and consumer applications. This type of transistor is made up of two semiconductor junction layers, with the base being the layer in the middle. The current flows through the emitter and collector, where the voltage is increased or decreased. This type of device is ideal for amplifying and switching electronic signals.
The NSVBSS63LT1G is commonly used in digital and analog circuits. In digital circuits, this type of transistor is typically used to turn a digital signal on or off. This can be used to control the power consumption of the device, as well as the performance of the electronic device. In an analog circuit, the NSVBSS63LT1G can be used to build an amplifier or an oscillator. Additionally, it is also used in power supplies and motor drivers.
In addition to the applications mentioned above, this type of transistor also has a wide range of other possible uses. One example is where it can be used to generate heat through a process called Thermionic Emission. This process works by making electrons flow from a hot plate to a cooler plate, generating heat in the process. It is also used in radio and television broadcasts, where it is used be amplify the signal that is being broadcast.
The NSVBSS63LT1G works on the principle of the voltage being applied across the base-emitter junction layer. When the voltage is high enough, it causes an electric current to flow through the junction and this in turn generates an amplified voltage across the emitter-collector junction. This amplified voltage is then used to perform the desired operation, such as switching or amplifying the signal.
The degree of amplification or capacitance provided by the NSVBSS63LT1G depends on the base-emitter junction resistance, the applied current and voltage, and the shape of the base-emitter junction. In general, the device is able to provide a gain of up to 1000 times its input voltage, making it an ideal choice for power amplifiers and voltage amplifiers.
In summary, the NSVBSS63LT1G is a single bipolar junction transistor that is widely used in both digital and analog circuits. Common applications include signal amplification and switching, as well as power supplies, broadcast applications, and thermoelectrics. It works on the principle of applying a voltage across the base-emitter junction layer, which in turn produces an amplified voltage across the emitter-collector junction.
The specific data is subject to PDF, and the above content is for reference
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NSVBSS63LT1G Datasheet/PDF