Allicdata Part #: | NSVBC123JPDXV6T1G-ND |
Manufacturer Part#: |
NSVBC123JPDXV6T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP 50V SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSVBC123JPDXV6T1G Datasheet/PDF |
Quantity: | 1000 |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 500mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
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Introduction
NSVBC123JPDXV6T1G is a pre-biased bipolar transistor array. This array is usually used in a wide range of applications including high frequency amplifiers, direct drive applications and high speed switching applications. It is designed to be cost effective, both in terms of its cost and its performance.
Application Field
NSVBC123JPDXV6T1G is mainly used in high frequency amplifiers and direct drive applications. For example, it can be used in switched mode power supplies, converters for power amplifiers, and switched multiplexers. Other possible usage includes radio receivers, automotive infotainment systems, and mobile phone base stations. The application of this array can be further enhanced if combined with other integrated circuits such as power transistor arrays and integrated circuits.
Working Principle
NSVBC123JPDXV6T1G works in a very simple manner. Basically, it is a pre-biased transistor array, meaning that all the transistors are biased in the same way. This means that a single voltage source can be used to operate it instead of applying multiple voltage sources. Additionally, the pre-biased nature helps reduce the need for adjustment and/or optimization as it will have a bias point that is already established.
The transistors are arranged in an array format and each transistor is connected to the other in a series-parallel manner. The array is then connected to a voltage source and an output signal is produced. In this way, the array acts like an amplifier, in which the signal is amplified by the transistors.
In addition to amplifying the signal, the output signal is also filtered. This is because the array is designed to allow only the desired frequency component to pass through. This filtering helps reduce the amount of noise in the output signal and improves the signal to noise ratio.
Conclusion
NSVBC123JPDXV6T1G is a pre-biased bipolar transistor array that can be used in a wide range of applications. It works by using a single voltage source to power the array and amplifying and filtering the output signal. This array is cost effective and provides excellent performance for high frequency amplifiers and direct drive applications.
The specific data is subject to PDF, and the above content is for reference
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