NTD110N02RT4G Discrete Semiconductor Products |
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| Allicdata Part #: | NTD110N02RT4GOSTR-ND |
| Manufacturer Part#: |
NTD110N02RT4G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 24V 12.5A DPAK |
| More Detail: | N-Channel 24V 12.5A (Ta), 110A (Tc) 1.5W (Ta), 110... |
| DataSheet: | NTD110N02RT4G Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta), 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3440pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12.5A (Ta), 110A (Tc) |
| Drain to Source Voltage (Vdss): | 24V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The NTD110N02RT4G is a Power MOSFET transistor which is one of the most widely used power transistor components in the field of power electronics. The NTD110N02RT4G transistor is a single enhancement-mode Power MOSFET which is manufactured using the advanced planar technology. It is encapsulated in a TO-252 package and has a maximum drain source voltage (VDS) of 110V and a maximum drain current (ID) of 10A. It also has a maximum power dissipation (PD) of 32W.
The NTD110N02RT4G application field mainly covers all kinds of power supply, voltage regulator, DC-DC/DC-AC converter, motor control, switching power supply, PLC modules and so on. It is widely used for commercial, industrial and home electronics, especially in industrial and home appliance.
The working principle of the NTD110N02RT4G transistor is to use a Gate-Source voltage (which can be either positive or negative) to control the electrical connection between the Source terminal and the Drain terminal. When the Gate-Source voltage is above the threshold voltage, the device is turned on. This allows the current to flow from the Drain terminal to the Source terminal. When the Gate-Source voltage is below the threshold voltage, the device is turned off and the current will not flow between the two terminals. Thus, the Gate voltage controls the current that can flow through the device.
The NTD110N02RT4G transistor has a low on-resistance (RDS(ON)) which makes it very efficient in terms of power consumption. It also has a low threshold voltage which allows the device to turn on at lower gate voltages. The device also has a high input capacitance (CISS), which allows it to be used in higher switching frequency applications. The device also has a high avalanche energy rating, which allows it to be used in high surge applications. The NTD110N02RT4G transistor is also a very fast switching device, which makes it suitable for high speed applications.
Overall, the NTD110N02RT4G is a high performance and very reliable power transistor component which can be used in a variety of applications. It has a low on-resistance, a low threshold voltage, a high input capacitance, a high avalanche energy rating and a fast switching capability. It is suitable for a multitude of applications such as power supply, voltage regulator, DC-DC/DC-AC converter, motor control, switching power supply, PLC modules and so on. Its wide usage makes it an ideal choice for many industrial, commercial and home electronics applications.
The specific data is subject to PDF, and the above content is for reference
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NTD110N02RT4G Datasheet/PDF