NTD18N06L-1G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.1W (Ta), 55W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	675pF @ 25V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	65 mOhm @ 9A, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	18A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The NTD18N06L-1G is a low-voltage composite MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device offered by ON Semiconductor Corporation supplying highest performance and reliability for today’s variety of applications.Operating at a maximum voltage of 18V, its maximum breakdown voltage is 20V which is ideal for switching high-power application systems. These systems may include critical automotive, industrial and consumer markets, among others. NTD18N06L-1G’s behavior is independent of temperature making it a very reliable and durable MOSFET for many high-end uses.The NTD18N06L-1G is described as an enhancement-mode MOSFET, that is, it can be used to amplify switching applications. In contrast to depletion-mode MOSFETs, these are more useful in creating high-frequency pulses. But what makes NTD18N06L-1G different compared with other single Mosfets, is the combination of high speed with low input capacitance under all bias conditions. This is beneficial, as it allows the device to operate with more efficiency, speed and reliability than any other type of MOSFET when controlling and switching high-power loads.This particular device also has a user-friendly 2MHz slew rate which makes it ideal for high-frequencies in various electronic circuits. It also has an output capacitans of 1nC which minimizes transient power losses associated with switching or controlling large power loads.NTD18N06L-1G has an energy efficiency rating of 100% and is specifically designed to provide the highest efficiency possible. Its maximum DC current is 12A and its maximum drain-source on-state resistance is 16 milli-ohm. Its total gate charge (Qg) is 88nC, which allows it to easily handle high switch frequencies and efficiently manage high power loads.Furthermore, NTD18N06L-1G has a maximum operating temperature of 175°C. This is significant compared to other single Mosfets which typically have a maximum operating temperature around 120°C. Therefore, NTD18N06L-1G can withstand higher levels of heat, allowing it to perform in the most extreme conditions.In conclusion, the NTD18N06L-1G is an ideal device for systems that require the highest performance and reliability. With its maximum breakdown voltage of 20V, its user-friendly 2MHz slew rate, and its maximum operating temperature of 175°C, this MOSFET is designed to handle today\'s most complex electronic systems. Furthermore, its high efficiency and low input capacitance ensure continually reliable and high-performance switching and control of high-power loads.

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