NTD18N06-1G

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The NTD18N06-1G is a MOSFET device manufactured by ON Semiconductor. This MOSFET device is part of their PowerTrench family of products and is a single N-channel Mosfet. This particular device is a logic level gate device that can be used in a wide variety of applications such as load switching, DC-DC conversion, over-current protection, AC-DC conversion and more. The device can also be used in high power audio applications due to its low on-state resistance.

The NTD18N06-1G is a power MOSFET that features a high current capacity of 18A and a drain-source voltage of 100V. This device is also quite efficient with a maximum power dissipation of 35W, making it ideal for applications where power savings are necessary. It also has a low turn-on resistance of just 5.1Ω, allowing it to be used in high power audio applications.

The NTD18N06-1G is made using advanced silicon oxide trench process technology enabling it to be used in a wide range of applications. The device features a maximum on-state resistance of only 0.1013Ω, giving it good power efficiency for switching applications. It also features a fast switching speed of 10V/ns, making it suitable for use in high speed applications.

The NTD18N06-1G is a MOSFET device with a logic level gate, meaning that it can be driven with a wide range of input voltages. This device is quite versatile in terms of its application fields, as it is suitable for use in applications such as load switching, DC-DC conversion, over-current protection, AC-DC conversion and more.

The working principle of the NTD18N06-1G is based on the properties of a MOSFET. The device can be used to control the voltage and current flow in an electronic circuit by using an input voltage to control the amount of current flow. This is accomplished by the application of the gate voltage. When a certain amount of gate voltage is applied, the source-drain resistance is decreased, allowing increased current flow. In addition, the device also operates with a drain-source voltage rating, which is used to limit the amount of current flow.

In summary, the NTD18N06-1G is a single N-channel MOSFET device manufactured by ON Semiconductor. It is part of their PowerTrench family of products and features a high current capacity of 18A and a drain-source voltage of 100V. It also has a low maximum on-state resistance of only 0.1013Ω and a fast switching speed of 10V/ns, enabling it to be used in high speed applications. The device operates on a logic level gate, meaning that it can be used to control the current flow in an electronic circuit by using an input voltage to control the amount of current flow. It is suitable for use in applications such as load switching, DC-DC conversion, over-current protection, AC-DC conversion and more.

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