Allicdata Part #: | NTD18N06L-001OS-ND |
Manufacturer Part#: |
NTD18N06L-001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 18A IPAK |
More Detail: | N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Through... |
DataSheet: | NTD18N06L-001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 55W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 675pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 9A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTD18N06L-001 is a type of MOSFET (metal–oxide–semiconductor field-effect transistor) that is commonly used in high-power electronic applications. It is a single-gate device with a maximum drain current rating of 63A, a maximum drain-source voltage rating of 600V, and a maximum gate-source voltage rating of 20V. The device also has improved body diode recovery time and a typical on-resistance of 67mΩ.
Application Field
The NTD18N06L-001 has a wide range of applications. It is commonly used in power management in automotive, industrial, and consumer applications where it is used for reliable commutation and on/off control. Examples of such applications include DC/DC converters, motor controllers, AC/DC adapters, and solar power inverters. The device is also suitable for high-side switching applications in which the MOSFET is utilized to control current flowing into the load with low power dissipation.
Working Principle
The working principle of an NTD18N06L-001 MOSFET is based on the threshold voltage principle in which a voltage applied to the device’s gate will affect the conductivity between the drain and the source. The device’s gate voltage must exceed the threshold voltage (VGS(TH)) in order to turn on the MOSFET and allow current to flow. When the voltage applied to the gate is below the threshold voltage, the device is off and no current is allowed to flow. This allows for precise control of current flow with very low power dissipation.
The NTD18N06L-001 also has an improved body diode recovery time, allowing it to switch faster than competing devices. This is due to the device’s low internal capacitance, which reduces the switching delay between the gate and the source. The low on-resistance also reduces the power losses due to the device’s conduction.
Conclusion
The NTD18N06L-001 is a type of MOSFET that is commonly used for high-power applications such as power management, motor controllers, and solar power inverters. It is capable of switching quickly thanks to its low internal capacitance and has a low on-resistance, which results in lower power losses. The NTD18N06L-001 has a wide range of uses and is a great choice for applications where reliable power control and low power dissipation is desired.
The specific data is subject to PDF, and the above content is for reference
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