| Allicdata Part #: | NTD12N10GOS-ND |
| Manufacturer Part#: |
NTD12N10G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 12A DPAK |
| More Detail: | N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Sur... |
| DataSheet: | NTD12N10G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.28W (Ta), 56.6W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 165 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The NTD12N10G is an excellent power MOSFET that can be used in a variety of different applications. It has a wide voltage range of 12V to -10V and is a good choice for applications that require a high current and/or low power consumption. The NTD12N10G also provides excellent switching speed and low drain-source ON resistance.
The NTD12N10G is a single-gate power MOSFET, which means that it is constructed from one semiconductor device, usually a metallic-oxide semiconductor field-effect transistor (MOSFET). The MOSFET is designed to control the power in the system by controlling the flow of electrons or electric current. When the gate of the MOSFET is open, the transistor allows the current to flow through its drain and source, which is called an ‘ON’ state. When the gate is closed, the MOSFET stops the current from flowing and is called an ‘OFF’ state.
MOSFETs can be used in a variety of applications such as audio amplifiers, power amplifiers, switching converters, motor control and robotics. The NTD12N10G is particularly suited to use in motor control and robotics applications because of its low gate-source capacitance and low drain-source voltage drop. The low gate-source capacitance helps improve the response time and efficiency of the motor, while the low drain-source voltage drop ensures that the current flowing through the transistor will be as low as possible.
The NTD12N10G is also used in applications such as audio amplifiers, power amplifiers and switching converters because it has excellent switching speeds, low drain-source ON resistance, and low gate-source capacitance. The MOSFET has the capability to switch rapidly and quickly, allowing for efficient operation with minimal interference. Furthermore, the low ON resistance and high efficiency of the NTD12N10G also help reduce power losses.
In addition to its use in audio and power amplifiers, the NTD12N10G is also well suited for use in switching converters, due to its excellent switching speed and low drain-source resistance. The MOSFET’s high drain-source voltage drop helps keep the voltage at the output of the converter consistent, while the low gate-source capacitance helps reduce the amount of power lost. This makes the NTD12N10G an ideal choice for applications such as DC-to-DC converters, AC-DC converters, and DC-to-AC converters.
In summary, the NTD12N10G is an excellent power MOSFET, suitable for a range of applications, notably motor control and robotics, audio, and power amplifiers, and switching converters. The MOSFET’s high current and low power consumption, excellent switching speed, and low gate-source capacitance, as well as its low drain-source voltage drop, all make it an excellent choice for these types of applications.
The specific data is subject to PDF, and the above content is for reference
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NTD12N10G Datasheet/PDF