Allicdata Part #: | NTD12N10-1G-ND |
Manufacturer Part#: |
NTD12N10-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 12A IPAK |
More Detail: | N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Thr... |
DataSheet: | NTD12N10-1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.28W (Ta), 56.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTD12N10-1G is a single N-channel MOSFET, which is widely used in many different applications. It is a type of transistor that helps control current flow in a circuit. This MOSFET has a low gate threshold voltage, which allows for easy control of the current flow. The NTD12N10-1G has a maximum drain-source voltage of 50 volts and a maximum gate-source voltage of 20 volts, and can handle up to 1 ampere of continuous drain current.
The basic working principle of a MOSFET is quite simple. When a voltage is applied to the gate, the channel is pinched off and the current is blocked. This is the off-state, or what is known as “cut-off.” When a larger voltage is applied to the gate, the channel is opened and the current is allowed to flow. This is the on-state, or what is known as “saturation.” The NTD12N10-1G has an on-state resistance of 12 ohms, meaning that it requires 12 volts to be applied to the gate in order to open the channel and allow the current to flow.
One of the most common applications of the NTD12N10-1G is in motor control circuits. It allows for precise control of the motor speed by controlling the amount of current that flows through the motor windings. The NTD12N10-1G can also be used in high-speed switching circuits, such as switching power supplies and LED drivers. It is also commonly used in audio amplifiers and digital signal processing circuits. This MOSFET is ideal for high-power, high-frequency switching applications, due to its low gate-source capacitance, low on-state resistance, and high drain-source breakdown voltage.
The NTD12N10-1G is also well-suited for low-side switching applications, due to its ability to handle 100 volts of drain-source voltage. This makes it well-suited for automotive and other low voltage applications, where power is limited. The NTD12N10-1G also has a low gate threshold voltage and small gate input capacitance, making it ideal for low-power switching applications, such as sample and hold circuits.
Overall, the NTD12N10-1G is a versatile MOSFET that can be used in a wide range of applications. From motor control to high-frequency switching, the NTD12N10-1G offers the features necessary to make any application successful. Its low gate threshold voltage and low on-state resistance make it ideal for low-power and low-voltage applications, while its high drain-source breakdown voltage makes it suitable for high-power, high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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