NTD14N03RT4 Discrete Semiconductor Products |
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Allicdata Part #: | NTD14N03RT4OSCT-ND |
Manufacturer Part#: |
NTD14N03RT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 2.5A DPAK |
More Detail: | N-Channel 25V 2.5A (Ta) 1.04W (Ta), 20.8W (Tc) Sur... |
DataSheet: | NTD14N03RT4 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.04W (Ta), 20.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 115pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 1.8nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 95 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The NTD14N03RT4 is a high voltage, high current insulated-gate bipolar transistor (IGBT) specifically designed for automotive and industrial motor drive applications. It offers both cost-effective and reliable operation. The NTD14N03RT4 is a low voltage, high wattage transistor and is ideal for applications that require a large amount of power. It is typically used in applications such as DC-DC converters, power supplies, and power converters.
The NTD14N03RT4 is an insulated gate bipolar transistor (IGBT) designed for automotive and industrial motor drive applications. IGBTs are power semiconductor devices that combine the majority of the best features of both MOSFETs and BJTs, making them ideal for high power applications. IGBTs are also known for their fast switching times and high frequency control. The NTD14N03RT4 is a low voltage, high wattage transistor. It has a maximum voltage rating of 800V, a continuous current rating of 10A, a peak current of 16A, and a maximum power dissipation of 298W.
The NTD14N03RT4 is a source-corporate type of IGBT. It is an enhancement-mode device, meaning that it switches on when a positive signal is applied to its gate and off when the signal is removed. In this mode, the forward voltage drop across the device is very small, allowing it to be used in high frequency applications. This IGBT is designed with low on-state voltage, low switching losses, and short circuit protection to ensure reliable operation even during extremely short pulse applications. The NTD14N03RT4 is also designed for very low turning loss and has a soft switching feature for improved efficiency.
In terms of packaging, the NTD14N03RT4 is available in two package options: D2Pak and D2W. The D2Pak package is a thermal resistance that allows it to be used in high-power applications. The D2W package is a plastic package designed for low-power applications. The NTD14N03RT4 has a 7-pin dual-in-line form factor that allows the components to be easily mounted on a circuit board.
The NTD14N03RT4 is an ideal choice for applications that require high power switching with low gate drive current (up to 10A). It has a high power dissipation capability, low on-state voltage, and low switching losses. The fast switching times and high frequency control make it an excellent choice for use in automotive and industrial motor drive applications. The low package thermal resistance and two package options also ensure that it can be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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