NTD18N06

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The NTD18N06 is a high speed logic level single N-Channel Enhancement Mode MOSFET. This device is designed to minimize power losses while providing robust performance in a wide range of applications. It features a low RDS(on) resistance, high current carrying capacity, and low gate charge. The NTD18N06 is the perfect choice for controlling the power in high efficiency systems.

NTD18N06 Application fields:

The NTD18N06 is an ideal device for applications requiring high efficiency and low power loss. It is suitable for high power DC/DC converters, Class D amplifiers, motor drivers, and SMPS. It can be used to create switching circuits in off-line power supplies, motor drivers, high side switches, and general purpose power switches.

NTD18N06 Working Principle:

The NTD18N06 is a MOSFET that is operated by controlling the gate voltage. Biasing the gate voltage positive with respect to the source pin applies a voltage across the gate oxide layer, which generates an attractive force on electrons, drawing them through the oxide layer and into the Gate region. This effect is called “induced inversion”, and it is responsible for the transistor\'s behavior. When the gate voltage is negative with respect to the source pin, the electrons are depleted, and the transistor is off. The inverting action of the gate voltage also means that the NTD18N06 can be used as a voltage controlled switch.

Operating the NTD18N06 as a switch is done by setting the gate voltage to either ground (VGS < Vthreshold) or Vcc (VGS >= Vthreshold), where Vthreshold is the voltage at which the current starts to flow. This voltage is usually a few tenths of a volt, but it can vary depending on the device. For example, the NTD18N06 can operate between VGS of 3V and 10V.

When the gate voltage is at the threshold or above, the source-drain resistance (Rds) is low, allowing the transistor to conduct current. The amount of current is determined by the amount of voltage applied to the gate and the size of the current path. In this case, the Rds determines the size of the current path, so the greater the Rds, the less current that can be drawn.

The NTD18N06 can be used for many applications such as the control of power or the creation of switching circuits. Its low Rds(on), high current carrying capacity, and low gate charge make it an excellent choice for use in high efficiency systems. Thanks to its voltage controlled input gate, it can also be used as a switch, allowing it to be used in a variety of applications where reliability and efficiency are crucial.

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