NTD15N06L-001 Allicdata Electronics
Allicdata Part #:

NTD15N06L-001OS-ND

Manufacturer Part#:

NTD15N06L-001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 15A IPAK
More Detail: N-Channel 60V 15A (Ta) 1.5W (Ta), 48W (Tj) Through...
DataSheet: NTD15N06L-001 datasheetNTD15N06L-001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.5A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD15N06L-001 is a single, low-gate charge, low on-state resistance, low capacitance, and fast switching time N-channel MOSFET. It enhances the power efficiency, increases power density, and features a wide range circuit topology, high-loop stiffness, and superior thermal performance. With its low gate charge and low on-state resistance, the NTD15N06L-001 is a great choice for any power MOSFET solution.

The NTD15N06L-001 is a three-terminal device which, in contrast to the two-terminal BJTs, produces an output current which is dependent on an input voltage control signal. It also has a very low gate resistance, which makes it possible to operate at very high frequencies and switching speeds.

The NTD15N06L-001 is typically used in DC-DC converters, switching power supplies, power amplifiers, and other high-frequency power applications. It can provide improved system efficiency and more precise power control in current-mode and voltage-mode applications. The low gate-charge and low on-state resistance of the MOSFET provide superior performance and efficiency when switching at high frequencies.

The NTD15N06L-001 is designed to be used in high-current switching applications. The low RDS(ON) resistance and superior thermal performance of this MOSFET make it well-suited for these applications. It is capable of carrying large load currents, operating at high temperatures, and providing excellent switching immunity.

The working principle of the NTD15N06L-001 is based on the Channel Stopper Effect (CSF). In the CSF, a thin layer of insulating material (such as poly-silicon) is inserted between the gate and drain of the transistor, creating an insulated area where a voltage potential can be applied. When a voltage potential is applied through the gate electrode, this will cause the electrons in the insulated area to be thrown into the flow of current and produce a high current gain. This high current gain is what makes the NTD15N06L-001 such an efficient power MOSFET.

The NTD15N06L-001 has a fast switching time, allowing for increased power efficiency and improved system performance in applications that require quick switching action. The NTD15N06L-001 also has a low gate charge and a low on-state resistance, making the MOSFET well-suited for high-frequency power applications. The high-loop stiffness of the device makes it suitable for use in voltage-mode and current-mode applications. Additionally, the device has a large current-carrying capacity, making it very well-suited for high-current switching applications.

Overall, the NTD15N06L-001 is a great choice for high power applications. It offers a fast switching speed, low gate charge, low on-state resistance, and large current-carrying capacity. This MOSFET is designed for use in DC-DC converters, switching power supplies, power amplifiers, and other high-frequency power applications, and the superior performance and efficiency of this device make it well-suited for use in these applications.

The specific data is subject to PDF, and the above content is for reference

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