NTD18N06LT4 Allicdata Electronics
Allicdata Part #:

NTD18N06LT4OS-ND

Manufacturer Part#:

NTD18N06LT4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 18A DPAK
More Detail: N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Surface...
DataSheet: NTD18N06LT4 datasheetNTD18N06LT4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTD18N06LT4 is a MOSFET with a single gate. It is a type of field effect transistor (FET) commonly used in power electronics applications. The NTD18N06LT4\'s primary function is power transmission from higher voltage sources to lower voltage load devices. The MOSFETs are also used to control the frequency of electric current.

MOSFETs are semiconductor devices with four terminals connected to three regions of semiconductor material: the source, the body (or the drain), and the gate. The current flowing through the device is controlled by a signal that is applied to the gate. When a voltage is applied to the gate, a field is formed between the gate and the source. This field then modulates the source-to-drain current. In the case of the NTD18N06LT4, this field effect is used to control the power transmission.

The NTD18N06LT4 is designed to switch high power loads. The MOSFET\'s maximum drain-source voltage rating is 60V, and its maximum drain current is 18A. This makes it suitable for a wide range of applications, including motor control, power converters, and DC-DC converters. It is also used in automotive applications, such as electronic fuel injection systems and engine management systems.

The NTD18N06LT4 is a non-polar MOSFET that can be used in either the N or P-channel. This allows designers to use the device in a variety of applications. For example, the NTD18N06LT4 can be used to switch inductive loads, such as motors, at high frequencies. This is due to the low total gate charge of the device, which allows for fast switching times.

The NTD18N06LT4 is also designed for high efficiency. The low on-state resistance of the device helps reduce power losses, while its high breakdown voltage ensures that the device remains stable even under high load conditions. The integrated protection features of the device also help to protect the system from overcurrent, over-voltage, and overtemperature conditions.

The NTD18N06LT4 is a versatile and efficient MOSFET that can be used in a wide range of applications. Its robust and reliable features make it suitable for use in high power systems, while its flexible design makes it suitable for use in motor control, power converters, and automotive systems.

The specific data is subject to PDF, and the above content is for reference

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