NTD18N06-001 Allicdata Electronics
Allicdata Part #:

NTD18N06-001OS-ND

Manufacturer Part#:

NTD18N06-001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 18A IPAK
More Detail: N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Through...
DataSheet: NTD18N06-001 datasheetNTD18N06-001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD18N06-001 is an integrated power switching device specially designed for low-voltage, low-frequency electric vehicles. This device is suitable for electric vehicle starters, drives, and electric vehicle controllers. It is also suitable for other applications such as switching regulators for universal serial bus (USB) and light emitting diodes (LEDs).

The NTD18N06-001 is a single-featured enhancement-mode power field-effect transistor (MOSFET) switch, meaning that it acts as a voltage-controlled switch. In this device, a small current passing through the gate (control electrode) is used to control a much larger current passing through the source and drain electrodes. This device is designed for low-voltage operation, meaning that the voltage applied to the gate is less than 10V, typically.

The working principle of the NTD18N06-001 is simple. The gate is biased with a small current, and the voltage applied to the gate controls the conductivity of the MOSFET switch. As the voltage increases, the conductivity between the source and drain of the device also increases. This conductivity is called the "on resistance." As the voltage decreases, the on resistance decreases and the current flow is shut off.

The device has several key features which make it an attractive choice for various applications. For example, it has a low on-state resistance of just 6mΩ, making it highly efficient for many applications. In addition, it has a breakdown voltage of 40V and a gate threshold voltage of 4V, which allows for efficient control of the switch even at low voltage levels. Additionally, it has a high-temperature capability of up to 150°C and is environmentally friendly, meeting RoHS requirements.

The NTD18N06-001 is designed to be used in a range of applications. In electric vehicles, it is an ideal power switching device, providing efficient control and low on-state resistance. Additionally, it can be used in USB port switching and LED lighting applications, as well as other power switching applications.

In conclusion, the NTD18N06-001 is a highly efficient, single-featured enhancement-mode power field-effect transistor (MOSFET) switch specifically designed for low-voltage, low-frequency electric vehicle applications. It has a low on-state resistance of just 6mΩ and a breakdown voltage of 40V which allows efficient control of the switch even at low voltage levels. It is also environmentally friendly, meeting RoHS requirements. Additionally, it is suitable for a range of other applications such as USB port switching and LED lighting.

The specific data is subject to PDF, and the above content is for reference

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