Allicdata Part #: | NTD5C688NLT4G-ND |
Manufacturer Part#: |
NTD5C688NLT4G |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | T6 60V LL DPAK |
More Detail: | Mosfet Array N-Channel 7.5A (Ta), 17A (Tc) Surfa... |
DataSheet: | NTD5C688NLT4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.42793 |
Series: | -- |
Part Status: | Active |
FET Type: | N-Channel |
FET Feature: | -- |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Ta), 17A (Tc) |
Rds On (Max) @ Id, Vgs: | 27.4 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
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The NTD5C688NLT4G is an advanced technology silicon gate CMOS device that is a type of field-effect transistor (FET) array. It is manufactured by ON Semiconductor and has been in production since the year 2000. It is composed of an array of transistors that are interconnected in a specific configuration. The NTD5C688NLT4G is a very useful and versatile device that is used in a variety of applications, ranging from telecommunications and automotive to aerospace, medical and consumer electronics.The most common application of the NTD5C688NLT4G is in digital logic circuits. It can be used to create logic gates, flip-flop circuits and memory circuits. It is a commonly used component in the design of integrated circuits (IC) for computers and other electronic systems. It is also used in radio frequency (RF) circuits, where it provides isolation between different parts of the circuit.The NTD5C688NLT4G is a three-terminal array composed of four metal-oxide-semiconductor field-effect transistors (MOSFETs). Each MOSFET is an independent device and has its own source, gate and drain terminal. The source and drain terminals are used to connect the FET to other components and the gate terminal is used to control the current flow through the FET. The NTD5C688NLT4G is designed so that the four MOSFETs are interconnected in such a way that they share a common source voltage, but have separate gate voltages, allowing them to be individually controlled.The primary advantage of the NTD5C688NLT4G is that it can be used to create a single, compact package containing four MOSFETs. This is beneficial for creating small, space-saving circuits. Furthermore, since the layout of the circuit is already determined, the design process is simpler, which can save time and money.The working principle of the NTD5C688NLT4G is based on the ability of MOSFETs to control current flow between two electrodes. When a voltage is applied to the gate terminal, it creates an electric field that modifies the conductance of the channel through which electrons flow between the source and drain terminals. This allows for precise control of current flow, and can be used to create complex circuits with minimal effort.In conclusion, the NTD5C688NLT4G is a compact and versatile device that is used in a wide range of applications. It is composed of four interconnected MOSFETs that can be individually controlled to create logic circuits, RF circuits and other complex circuitry. It also provides a number of advantages, such as its space-saving and cost-saving benefits, as well as its simplicity of operation. The NTD5C688NLT4G is an incredibly useful device and it is no wonder why it is a popular choice among engineers.
The specific data is subject to PDF, and the above content is for reference
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