NTD50N03RG

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.5W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	750pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 11.5V
Series:	--
Rds On (Max) @ Id, Vgs:	12 mOhm @ 30A, 11.5V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C:	7.8A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The NTD50N03RG is a high-performance, low-side logic-level N-channel MOSFET transistor. It is commonly used in various applications, including load switching, current sensing, and ground switching. In this article, we’ll take a look at the application field of the NTD50N03RG and its working principle.

Applications

The NTD50N03RG is very versatile because it can be used in a wide range of applications. First, it can be used in automotive applications, such as load switching with a maximum load current of 10A, continuous current of 12A, and maximum voltage capability of 40V. It can also be used in point-of-load regulators, where it enables high-efficiency and fast transient response, as well as current monitoring applications, allowing it to serve as a current-sense device.Moreover, it is also useful in battery management systems, as it can be used for cell balancing and equalization. It is also suitable for low-voltage DC power applications, such as LED lighting. Finally, it can be used as a general-purpose switch, as it is capable of switching loads up to 40 volts DC at a maximum of 10 amps to meet the needs of various industrial applications.

Working Principle

The NTD50N03RG operates on the principle of Drain-Source voltage (VDS). The MOSFET consists of an insulated gate, which is driven by "gate signal" provided by the user, and is placed over the P-Type substrate. When the gate signal is low, no current flows through the MOSFET and the device is said to be OFF. However, when the gate signal is high, the P-channel MOSFET conducts current across the Drain and Source terminals. The Drain-Source voltage controls the amount of current that flows through the MOSFET. This is known as the "threshold voltage" and it varies according to the type of MOSFET and its operational parameters. Moreover, when the drain voltage increases more than the threshold voltage, the MOSFET becomes active and a large current passes through it, resulting in increased heat generation and power dissipation.

Conclusion

The NTD50N03RG is a low-side logic-level N-channel MOSFET transistor that is used in many applications, such as load switching, current sensing, ground switching, and point-of-load regulators. It works on the principle of Drain-Source voltage, wherein the gate signal is used to control the current flowing through the MOSFET. The threshold voltage of the device varies according to its type and parameters. Its wide range of applications and ease of use make it an ideal device for many industrial and automotive applications.

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