NTD50N03RT4

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NTD50N03RT4 is a series of N-channel enhancement-mode vertical Power MOSFETs which have been specifically designed and tested to achieve an optimal on-state resistance up to 49mΩ per typ. NTD50N03RT4 is especially suitable for low-frequency and low-power DC-DC conversion applications due to its low gate charge Qg. The device is characterized by a fast switching speed, high breakdown voltage BVDSS, low drain-source on-state resistance RDS(on) and an integral built-in source-drain diode.

The NTD50N03RT4 is suitable for use in a wide range of power conversion applications, such as DC-DC converters, switching mode power supplies, motor drives, and other applications requiring high-speed, high-voltage switching devices with low on-state resistance values. Its low gate charge and fast switching are customized for low-power applications and enable superior performance in low power circuitry. This MOSFET also provides an integral reverse-source-drain diode, which further improves the device performance.

The NTD50N03RT4 is a vertical N-channel, normally-off, enhancement-mode MOSFET with a self-sustaining, symmetrical structure. It operates from a single gate voltage, with a positive voltage applied to the gate, current will flow from the drain to the source, thus providing the normally-off feature. Its body diode is automatically turned on for negative gate voltage. The symmetrical body structure also eliminates the need for large external resistor components, thus further reducing the size and cost of circuit components and eliminating the need for additional external control processes.

The NTD50N03RT4 operates on the principle of electrostatic doping of positive charges into the source and negative charges onto the drain by an electric field generated between the source and the drain. This field is created by the application of an appropriate electrical signal across the gate and drain of the device. When a positive electrical signal is applied to the gate, electrons are attracted toward the positively charged area in the source and away from the negatively charged area on the drain. This causes the MOSFET to become conductive and allow current to flow from drain to source, making the device increase in conductivity as the gate voltage increases.

The NTD50N03RT4 is constructed using advanced CMOS process technology to provide superior electrical characteristics. The device is protected from excessive power dissipation through an integrated \'valley-precharge\' process, which prevents the device from entering a latch-up state under severe overload conditions. Additionally, its specialized structure allows for exceptionally fast switching times, enabling it to be used in higher power applications where high-speed switching is required in order to optimize the performance of these circuits.

The NTD50N03RT4 has been designed for maximum efficiency in high frequency switching applications, where its low on-state resistance and high voltage capability are of great benefit. Its fast switching times, low gate charge, and its integral reverse-source-drain diode make it ideal for use in low-cost, low-power DC-DC conversion circuits, while its superior voltage and current capabilities allow it to be used in a wide range of power conversion applications. Its rugged construction and superior characteristics make the NTD50N03RT4 an excellent choice for a wide variety of applications.

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