NTD5C446NT4G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	66W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2300pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	34.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

<p>The <strong>NTD5C446NT4G</strong> is a four-channel N-channel MOSFET. It is a type of semiconductor that has been specifically designed for use in power-electronic applications such as battery chargers and converters. More specifically, it has been optimized to deliver low-loss power switching and high power density.</p><p>The NTD5C446NT4G is considered a “single” MOSFET as it is a single component that contains all of the typically separated components on a single chip. This includes the metal oxide (MOS) gate, source, and drain connections as well as the metal shield that creates the channel insulation between the gate and the channel.</p><p>The working principle of the NTD5C446NT4G is based on the same principles as all MOSFETs. When a voltage is applied to the gate, it creates an electric field that induces a charge in the channel between the source and drain. This charge creates an electric field that modulates the current flowing through the MOSFET. This is known as “gating”, and is the primary mechanism used by MOSFETs in order to regulate current.</p><p>As mentioned earlier, the NTD5C446NT4G has been designed for use in power electronic applications. It is ideal for high-current, high-voltage battery-charging scenarios, where low loss and high efficiency are of the utmost importance. It is also capable of controlling higher power levels that would normally require the use of multiple transistors.</p><p>Due to its power-processing capabilities, the NTD5C446NT4G is also commonly used for motor control and for voltage regulation. In motor control applications, the MOSFET is used to control the voltage and current that is supplied to the motor, ensuring that the motor runs smoothly and efficiently. It can also be used for switching applications, such as the switching of high-voltage circuits.</p><p>In addition to its power-processing capabilities, the NTD5C446NT4G is also capable of providing high levels of noise protection, as it has been designed to minimize the effects of EMI (electromagnetic interference). Furthermore, it also provides a high level of temperature protection, allowing it to be used in higher-temperature applications.</p><p>In conclusion, the NTD5C446NT4G is a single-channel N-channel MOSFET designed for use in power electronic applications. Its working principle is based on the same principles as all other MOSFETs, where it can be used to regulate current and provides high levels of noise and temperature protection. As such, it is ideal for use in high-voltage, high-current motor control and power-switching applications.</p>

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description