NTD5414NT4G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	55W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	48nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	37 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	24A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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NTD5414NT4G is an MOSFET commonly used in electronic applications. This device is a single N-channel enhancement type metal oxide semiconductor field effect transistor (MOSFET). It is designed to provide low power, low gate threshold voltage, and low on-resistance. With its exceptional features, NTD5414NT4G has found its application in power management, audio amplifiers, and other digital logic applications. MOSFET is a three-terminal semiconductor device, with its terminals being the source, the drain and the gate. It is an enhancement type field effect transistor with the gate terminal hooked up to a voltage. When a positive voltage is applied to the gate terminal, the conductivity between the source and drain increases drastically, allowing much more current to flow. This is known as the “on” state. When the gate voltage is disconnected, the device returns to the “off” state which is non-conductive. The NTD5414NT4G has a maximum source to drain voltage of out 250V and the gate-source voltage range is -10V to 20V. Its maximum source to drain current (drain current) is 8.4A and its maximum gate to source current is ±20mA. It also has a maximum junction to case thermal resistance of 75°C/W. Its total gate charge is 45 nC and its gate threshold voltage is 5V. When the device is in its “off” state, its on-resistance is 160mΩ and its breakdown voltage is 32V.To use the NTD5414NT4G, its gate voltage must be connected to a voltage supply, while the source and drain terminals are connected to a load. This can be in the form of a motor, a battery, a switch or any other device which requires power. When the voltage is applied to the gate terminal, current will flow from the source to the drain, allowing the device to be in its “on” state. This in turn powers the device or load connected to the source and drain terminals. The current will then be controlled by the voltage applied to the gate terminal, as it determines the conductivity of the channel. The NTD5414NT4G is an excellent device for this purpose, as it has a low gate threshold voltage and low on-resistance.The NTD5414NT4G is widely used in various electronic circuit designs due to its versatile features. It can be used in audio amplifiers and switching circuits, power management systems, and voltage regulators. It is also commonly used in contactors, relays and motor controllers. Additionally, it can be used in battery chargers, LED drivers and medical devices. Overall, the NTD5414NT4G is a versatile and efficient MOSFET designed to provide low power, low gate threshold voltage, and low on-resistance. It is a single N-channel enhancement type MOSFET with a wide range of applications, from power management to audio amplifiers and other digital logic applications.

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