Allicdata Part #: | NTD50N03R-ND |
Manufacturer Part#: |
NTD50N03R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 7.8A DPAK |
More Detail: | N-Channel 25V 7.8A (Ta), 45A (Tc) 1.5W (Ta), 50W (... |
DataSheet: | NTD50N03R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 11.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 30A, 11.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A (Ta), 45A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD50N03R is a high-performance 60V logic level N-channel MOSFET. It is an advanced power MOSFET that combines a small size and low RDS(on) with high levels of robustness and fast switching. The device has a channel resistance of 3 mΩ and a channel breakdown voltage of 60V, making it an excellent choice for applications such as DC-DC conversion, power supply circuits, motor drive circuits, and general motor control.
The main usefulness of the NTD50N03R lies in its versatile application in both power and logic circuits. In power circuits, the low on-resistance makes it ideal for high-efficiency DC-DC converters and power converters, while its fast switching speed makes it well suited for switching power applications. In logic circuits, the device\'s low gate drive current requirements allow for improved efficiency and better reliability.
The working principle of the NTD50N03R is based around its metal oxide semiconductor (MOS) technology. In this configuration, the metal oxide layer acts as a gate electrode, and is used to control the flow of current in the device. The gate electrode is connected to a voltage source, and when the gate voltage is increased above the threshold voltage, the MOSFET turns "on". This turning "on" of the MOSFET is known as gate turn-on. As current flows through the drain-source channel of the MOSFET, the junction potential between the source and drain increases, allowing for more current to flow. As the gate voltage is decreased below the threshold voltage, the MOSFET turns "off". This turning "off" of the MOSFET is known as gate turn-off.
The NTD50N03R is an ideal choice for applications requiring fast switching and low on-resistance. Furthermore, its excellent power handling capabilities combined with its small size and fast switching speed make it an excellent choice for applications requiring high-efficiency and high-reliability. Furthermore, the low on-resistance and low gate drive current requirements make it ideal for applications requiring low power dissipation. As such, the NTD50N03R is an excellent choice for applications such as motor control and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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