Allicdata Part #: | NTD50N03R-1G-ND |
Manufacturer Part#: |
NTD50N03R-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 7.8A IPAK |
More Detail: | N-Channel 25V 7.8A (Ta), 45A (Tc) 1.5W (Ta), 50W (... |
DataSheet: | NTD50N03R-1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 11.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 30A, 11.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A (Ta), 45A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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In the area of transistors, FETs and MOSFETs, NTD50N03R-1G is a single transistor. This type of transistor is also known as a "metal oxide semiconductor field effect transistor", and it uses metal oxide barrier layers to create a channel of electric current. This transistor is a power semiconductor device that uses a large input and output resistance so that a very small input current can be amplified to produce a larger output current. It is used in a wide range of applications, including power amplification and voltage regulation.
The NTD50N03R-1G is typically used in applications in which a low-input resistance is beneficial for power amplification and voltage regulation. This type of transistor offers excellent frequency and high-temperature performance as well as robustness, enabling it to be used in a range of applications. It can be used in automotive and aerospace applications, in addition to commercial and industrial applications.
The working principle of the NTD50N03R-1G transistor revolves around the formation of a channel of electric current. This is accomplished by the metal oxide barrier layer that is placed between the source and the drain of the transistor. When the source voltage is increased, the gate voltage is decreased and the channel of electric current is opened. As the current passes through the channel, it is amplified and a higher output current is achieved.
The design of the NTD50N03R-1G transistor ensures that it can be used in a wide range of operating environments and that it offers excellent performance and efficiency. It is capable of providing a very low input resistance and a high output current, making it suitable for a range of applications. Moreover, it is also highly reliable and features robust construction.
The NTD50N03R-1G transistor can be used in a variety of applications, from automotive and aerospace applications to commercial and industrial applications. It is typically used in applications in which power amplification and voltage regulation are required, as it is capable of providing a very low input resistance and a high output current. In addition, it is highly reliable and robust, making it suitable for a range of applications.
In conclusion, while NTD50N03R-1G is a single transistor, it has a wide range of applications, from automotive and aerospace applications to commercial and industrial applications. It is capable of providing a very low input resistance and a high output current, making it suitable for a range of applications, including power amplification and voltage regulation. Moreover, it is highly reliable and robust, making it ideal for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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