NTD5867NLT4G Discrete Semiconductor Products

The NTD5867NLT4G is a single, low-voltage, very high voltage, P-channel Enhancement Mode Power MOSFET transistor. Primarily intended for application in battery operated equipment and small electronics, this transistor is easily able to provide a guaranteed amount of power in a small package.

In comparison to ‘normally on’ transistors, the NTD5867NLT4G is a ‘normally off’ type of transistor. This means that the transistor is initially off in the absence of a voltage. In order to turn on the transistor, a voltage needs to be applied to the gate allowing electrons to flow through the channel. This is equivalent to turning on a light switch. In circuits where the transistor is used, the applied voltage to the gate will switch the device from off to on and vice versa.

In general, the NTD5867NLT4G is very effective in a wide range of applications such as low-voltage audio amplifiers, DC motors, battery-powered consumer electronics, power management systems, voltage and current regulators, automotive circuits, translators, and mobile phone applications. With a breakdown voltage of 500 Volts and an on-resistance of only 16.5 mΩ, this device is ideal for boosting the drive capability of an existing circuit.

In addition, the NTD5867NLT4G is a power MOSFET with 110 mA continuous gate source leakage to help reduce quiescent losses. Also, its high surge current capability allows the device to handle short duration overloads caused due to any occasional impulse or spikes of current that could happen in the circuit.

The working principle of the NTD5867NLT4G is based on the electrostatic field effect. When voltage is applied to a P-channel enhancement MOSFET, positively charged carriers are attracted from the source to the drain and a channel is produced that allows current flow. This channel is controlled by the gate terminal, which will be more positive when compared to the source. As the positive gate voltage increases, the channel widens and more carriers will move and hence, the drain current will also increase.

In conclusion, the NTD5867NLT4G is a single, low-voltage, very high voltage, P-channel Enhancement Mode Power MOSFET transistor which offers excellent performance in a wide variety of applications, thus making it an ideal choice for designers looking to reduce costs and optimize the performance of their products.