Allicdata Part #: | NTD5865NL-1GOS-ND |
Manufacturer Part#: |
NTD5865NL-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 46A IPAK |
More Detail: | N-Channel 60V 46A (Tc) 71W (Tc) Through Hole I-PAK |
DataSheet: | NTD5865NL-1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NTD5865NL-1G is one of the most powerful types of transistors, belonging to the family of Field Effect Transistors (FETs) and Mosfet (MOSFET). It is a single integrated circuit that is designed for switching applications and designed to continuously operate with minimum power loss and low on-resistance. This type of transistor offers excellent current ratings and switching performance, and it is more reliable compared to other FETs and MOSFETs.
In terms of its application, NTD5865NL-1G can be used in wide range application fields including various industrial, consumer and automotive electronics. It can be used in different types of power management solutions and power switches, such as High-side power switches and load switches. It also can be used in DC/DC converters, as well as in relay drivers, lamp/LED drivers and gate drivers.
The working principle of NTD5865NL-1G is relatively simple and straight forward. Like any other FETs, it needs a gate voltage applied across it to turn it on and off. When the gate voltage is high enough, it will activate the transistor, thus allowing current to flow between its source and drain pins. When the gate voltage falls below a certain level, the transistor will shut off and no current flow will occur. This type of tranistor can handle large amounts of current up to 47A and apart from voltage it also needs the amount of current flowing through it to be set.
Furthermore, NTD5865NL-1G has low input capacitance, and low gate threshold voltage, making it ideal for numerous switching applications. Its other benefits include extremely low thermal resistance, high EOS speed and low gate charge. It also provides excellent protection from current leakage, short circuit, thermal stress and electrostatic discharge.
Overall, NTD5865NL-1G is an advanced type of Field Effect Transistor (FETs) and MosFet (MOSFET) designed for a range of power management applications. It is a powerful integrated circuit that offers high current ratings and switching performance, low input capacitance, low thermal resistance and low gate threshold voltage. Thanks to its features, it can be safely used in various industries, consumer and automotive electronics.
The specific data is subject to PDF, and the above content is for reference
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