NTD5802NT4G Discrete Semiconductor Products

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NTD5802NT4G is a Surface Mounted Device (SMD), Field Effect Transistor (FET) from NXP Semiconductor. It possesses a low gate threshold voltage and low on-resistance and is popular with designers for biasing applications that require low-loss, high-speed switching and efficiency. This article will discuss the application fields and working principle of NTD5802NT4G.

Applications of NTD5802NT4G

The NTD5802NT4G is commonly used for signal switching, signal buffering and amplifier stages for applications such as:

• Pre-driver and gate drive stages for motor control, LED lighting and power management.
• High-side, low-side and half-bridge power switches.
• Analog and digital signal conditioning.
• High-power audio amplifiers.
• Science instrumentation.

The NTD5802NT4G is designed to be used with a wide range of voltage supplies. This versatility ensures that it can be used in different applications, such as those mentioned above. The device is also very efficient, with a low on-resistance of just 4.2 Ohms and a maximum drain current of 5.5 A. Furthermore, the device has excellent temperature performance, with a maximum junction temperature of 175oC.

Working Principle of NTD5802NT4G

NTD5802NT4G is a type of Field-Effect Transistor (FET), which is a type of semiconductor device that uses electric fields to control its conductivity. In FETs, the electrical charge carriers are normally located between two source and drain terminals. When the gate terminal is activated, it creates an electric field, which acts upon the charge carriers, controlling the current that passes between the two source and drain terminals.

In the case of the NTD5802NT4G, the gate terminal is connected to a low-threshold voltage of just 2.5 V. This allows for better control of the gate voltage, with lower losses and more accurate switching. Furthermore, the on-resistance of the NTD5802NT4G is 4.2 Ohms, meaning that it can be used to efficiently control high currents or switch high voltages.

Conclusion

NTD5802NT4G is a Surface Mounted Device (SMD), Field Effect Transistor (FET) from NXP Semiconductor. It is a low-threshold voltage device with excellent temperature performance, making it ideal for a wide range of applications such as pre-driver, gate drive, high side/low side and half-bridge power switches, analog and digital signal conditioning, high power audio amplifiers, and more. The device is also very efficient, with a low on-resistance of 4.2 Ohms and a maximum drain current of 5.5 A. It utilizes the field-effect principle to control current through the two source and drain terminals, which is triggered by an electric field created when the gate terminal is activated.

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