NTD5806NT4G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	860pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	19 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	33A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<div class="category"> <h1>Transistors - FETs, MOSFETs - Single</h1> <p>NTD5806NT4G is a type of transistor that is commonly used in a variety of applications. This type of transistor is a gallium arsenide (GaAs) technology-based field effect transistor (FET). It is specifically designed as a low-power, high-frequency switch.</p> <h2>Application Field</h2> <p>NTD5806NT4G is an ideal transistor choice for applications where small size and high flexibility are key components. It is commonly used in mobile communications systems and has been found to be effective in wireless power amplifiers (PA) applications, radio receivers, and antenna switches, as well as other automotive applications. </p> <p>In terms of commercial applications, it has been found to be beneficial for a variety of uses, including: on-board commercial aerospace and military systems, cellular base station power amplifiers and in GPS receivers. It is also used in small handheld devices such as laptops, PDAs and wireless Application Protocol (WAP) enabled phones. </p> <h2>Working Principle</h2> <p>This type of FET is a three-terminal device that has source, gate, and drain electrodes. The gate is the control terminal, controlled by a voltage or current, that determines the conductive status of the transistor. The output voltage or current flow is determined by the amount of voltage applied to the gate.</p> <p>In the NTD5806NT4G, the gate voltage controls the level of power consumption, meaning that its power consumption is significantly lower than other FETs of its kind. This makes the NTD5806NT4G a viable solution for applications that require low-power consumption devices.</p> <p>The NTD5806NT4G has an operating temperature range of -55°C to 125°C, making it an ideal choice for applications that require higher tolerance for temperature variations such as automotive uses. Additionally, it also has low noise characteristics, making it a great choice for applications that require this type of performance.</p> <p>In terms of its performance, NTD5806NT4G is known for its fast switching, high-frequency and low-loss characteristics, making it a great choice for applications that require it. Additionally, this type of FET has an incredibly low thermal resistance, making it a great choice for applications that require an efficient heat dissipation.</p> <h2>Conclusion</h2> <p>NTD5806NT4G is a low-power, high-frequency switch that is commonly used in a variety of applications. Its benefits include fast switching and high-frequency performance, as well as an incredibly low thermal resistance and an operating temperature range of -55°C to 125°C. This makes it an ideal choice for applications such as mobile communication systems and wireless power amplifiers, as well as a variety of other automotive and commercial applications.</p></div>

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