NTD5865NT4G Discrete Semiconductor Products |
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Allicdata Part #: | NTD5865NT4GOSTR-ND |
Manufacturer Part#: |
NTD5865NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 43A DPAK |
More Detail: | N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount DPAK |
DataSheet: | NTD5865NT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1261pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTD5865NT4G is one of the most popular field effect transistors (FETs) currently used in the electronics industry. It is a single NMOS, set as a depletion MOSFET, with a low on-resistance and a drain current of 8mA. It is an ideal choice for applications with low power output requirements such as remote control systems, mobile phones, consumer electronics, etc. This FET is very versatile and is commonly used in a wide range of digital and analog applications.
The NTD5865NT4G is a low-noise, low-threshold FET that operates over a wide temperature range. It is a small-signal device with two source-drain terminals and one gate terminal. It works by using an applied voltage at the gate to control the current flow between the source and the drain. When positive voltage is applied to the gate, the device acts as an N-channel MOSFET, allowing the current to pass from the source to the drain. When negative voltage is applied to the gate, the device acts as a P-channel MOSFET, blocking the flow of current.
One of the major advantages of the NTD5865NT4G is its low on-resistance. This makes it suitable for applications in which low power loss is desired. It also allows the device to be used in high-speed circuits, allowing it to switch faster than other devices with higher on-resistance. Additionally, it features a low leakage current and a relatively low gate-to-drain capacitance, making it suitable for applications where fast switching is required.
The NTD5865NT4G is widely used in consumer electronics such as remote control systems, mobile phones, and other applications requiring low power output. It is also used for RF amplifiers, DC-DC converters, and power management ICs. In addition, it can be used in logic circuits, linear amplifiers, and various other analog circuit applications. Because of its versatility, the device is used in a variety of industries ranging from automotive to medical.
The NTD5865NT4G is a reliable and versatile transistor that can be used in a variety of applications. It is an efficient choice for use in low-power output circuits and is well suited for applications requiring low leakage current and fast switching. Additionally, its low on-resistance makes it ideal for use in high-speed circuits. With its numerous advantages, it is easy to see why the NTD5865NT4G is one of the most popular transistors on the market today.
The specific data is subject to PDF, and the above content is for reference
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