NTD5867NL-1G

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The NTD5867NL-1G Field-Effect Transistor is a monolithic integrated circuit specifically designed for using in power supply and hot switching applications. This power MOSFET is available as a dual-source three-terminal device, and its operating characteristics are optimized for use with high-current, high-voltage applications. It is well-suited for use in portable devices, mobile devices and a variety of other applications that require a low on-resistance rating.

The NTD5867NL-1G is the most advanced power MOSFET from the NTD5867 series. It is fabricated using advanced planar technology, which provides fast switching speeds with low on-state resistance, enabling it to deliver higher operating current. The device also features an optimized gate drive structure which ensures high-efficiency operation in all conditions. Furthermore, the integrated gate-capacitance and ESD protection circuit ensures excellent dynamic performance and robustness against unexpected environmental stimuli.

The most prominent feature of the NTD5867NL-1G is its highly robust and low-on-state resistance rating. This device comes in a low foot-print TO-LL package, allowing it to deliver a lower on-state resistance rating than standard power MOSFETs. For example, the NTD5867NL-1G can deliver an on-state resistance rating of up to 3.2 mOhms, considerably lower than the typical ratings of power MOSFETs. This makes the device highly suitable for use in applications that require a high current rating with minimal switching losses.

This device operates by utilising a principle known as the ‘FET’ or ‘Field-Effect Transistor’. This is a type of transistor which is made of an insulated-gate that has been placed between two regions known as the source and drain. By applying a voltage to the gate, a current may be allowed to flow through the two regions. The gate voltage controls the amount of current flowing between the two regions. This principle makes the NTD5867NL-1G a highly efficient and versatile device, allowing it to be used in both high-current and high-voltage applications.

In conclusion, the NTD5867NL-1G Field-Effect Transistor is an excellent choice for applications that require a low on-resistance rating and robust operation. Its advanced planar technology ensures fast switching speeds with low on-state losses, while its optimized gate drive structure ensures high-efficiency operation in all conditions. With its unique features and characteristics, it is the optimal device for high-current and high-voltage applications.

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