Allicdata Part #: | NTD5407NT4G-ND |
Manufacturer Part#: |
NTD5407NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 38A DPAK |
More Detail: | N-Channel 40V 7.6A (Ta), 38A (Tc) 2.9W (Ta), 75W (... |
DataSheet: | NTD5407NT4G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.9W (Ta), 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 32V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A (Ta), 38A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTD5407NT4G is a small signal N-channel enhancement-mode field-effect transistor (FET), produced by NTD Semiconductor Products Inc. Suitable for switching and amplifier applications, the NTD5407NT4G is designed to provide high-speed switching performance with excellent levels of both power and reliability.
The NTD5407NT4G FET comes in an extremely small SOT-23 surface-mount package, allowing it to be mounted in a variety of equipment and applications. Due to its minimal size, the NTD5407NT4G can be attached directly to surfaces using solder, suitable for high density board packaging.
The NTD5407NT4G FET is termed an enhancement-mode FET, meaning that it offers minimal conduction until voltage is applied to the gate, at which point conduction occurs. This makes the FET suitable for use in a variety of switching and amplifier applications, such as pulse rectifiers, AC or DC switching, and so on.
The device is inactive when the gate-source voltage is 0; conduction occurs when a positive gate-source voltage is applied. This voltage is known as the ‘threshold voltage’; at this point, current will flow between the drain and source, allowing the FET to act as a switch.
The NTD5407NT4G FET has an incredibly low on-resistance of 0.33 Ohms, allowing it to operate at both high frequencies and switching speeds, making it suitable for use in digital circuits, and pulse rectifiers. The FET’s extremely low current gate charge and high switching speeds also make it suitable for many amplifier applications.
The FET also comes with an Industry Standard International Specifications Compliance (ISCO) rating of 300V and a maximum drain-source voltage of 75V. The device is capable of a maximum continuous drain current of 1A. Furthermore, the device has a maximum drain-source breakdown voltage of 130V, allowing it to be used in a variety of applications.
In terms of its application field, the NTD5407NT4G is effective for a range of commercial and industrial purposes. In addition to AC/DC switching and pulse rectifier applications as discussed above, the device is also suitable for use in power grids, opto-couplers, gate drivers, battery chargers, audio amplifiers and much more.
Overall, the NTD5407NT4G is an excellent choice for many types of applications. It is a high-performance FET that is exceptionally reliable and offers excellent levels of power and speed. Its compact size allows it to be used in a variety of small-scale equipment and devices, making it an ideal choice for many commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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