Allicdata Part #: | NTMFD4C85NT3G-ND |
Manufacturer Part#: |
NTMFD4C85NT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 8DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 1... |
DataSheet: | NTMFD4C85NT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 15.4A, 29.7A |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1960pF @ 15V |
Power - Max: | 1.13W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) |
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The NTMFD4C85NT3G is a high-performance Array of FETs or Complex Field Effect Transistors (FETs and MOSFETs). This device has a wide range of applications in areas like communications, industrial and consumer electronics, and lighting. The NTMFD4C85NT3G is ideal for use in high-speed circuits, as well as in low-power and low-noise designs.
A FET (or field effect transistor) is a type of transistor where the current flow through the device is controlled by an electric field. FETs are also known as Unipolar transistors which mean that the current can only flow in one direction, making them great for use in circuits where the load can be changed or reversed when needed. FETs are also better than bipolar transistors in that they have a higher current carrying capacity, higher speed, and lower power dissipation.
A MOSFET, on the other hand, is a type of field effect transistor where the current flow is controlled by a metal-oxide semiconductor (MOS) instead of an electric field. MOSFETs are often used for high-speed and low-noise applications such as switching, amplifying and driving loads. MOSFETs are also commonly used for protecting sensitive circuits from electrical transients and other forms of over-voltage protection.
The NTMFD4C85NT3G is an array of FET and MOSFETs which are used together to provide high-performance, high-speed, and low-power capabilities. This device is designed with a number of features which help to maximize the efficiency and performance of the circuit, while also allowing for customization of the device parameters according to the circuit requirements.
The NTMFD4C85NT3G has a built-in logic level shifter for switching between logic levels, and also includes current regulation for suppressing inductive transients. Additionally, the device includes an adjustable gate charge for controlling the current and a low-cost package for easy assembly. The device also includes a low-saturation voltage of <2V, providing improved performance in low-voltage applications.
The NTMFD4C85NT3G is commonly used for power switching applications in telecommunication, industrial, and consumer electronics circuits. This device is also ideal for use in high-speed circuits, as it is able to operate at frequencies up to 1 MHz. The device can be used to regulate the current and/or voltage in a variety of applications, including motor control, HVAC control, LED lights, and more.
The NTMFD4C85NT3G is an array of FET and MOSFETs which provide excellent performance, low-power and low-noise capabilities. The device is ideal for use in high-speed and low-voltage applications, and provides adjustable gate charge and current regulation for suppressing inductive transients. Additionally, the device includes a built-in logic level shifter and a low-saturation voltage of <2V which makes it a great choice for power switching applications. All of these features make the NTMFD4C85NT3G a great choice for any high-speed and low-power circuit design.
The specific data is subject to PDF, and the above content is for reference
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