NTMFS4833NST1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTMFS4833NST1G is a 60V, 48A TrenchMOS low on-resistance N-channel enhancement mode power Field-Effect Transistor (FET). It is composed with a 175°C temperature-stable current sense resistor, which is compliant with the automotive AEC Q101 qualified standard. The device features fast switching response, very low on-resistance and also high dv/dt ratio.

The NTMFS4833NST1G FET can be used across a wide range of applications, such as automotive lighting, automotive central power control, and DC motors. This device is designed to minimize switching losses, lower temperature rise, improve heat dissipation and reduce the power dissipation. It is also suitable for circuit protection, load protection and surge protection.

Working Principle

The NTMFS4833NST1G FET is a four-terminal semiconductor device. It consists of four terminals: source (S), drain (D), gate (G), and ground (GND). A channel is formed between the source and drain (S and D) when a bias voltage is applied to the gate (G). Current flows through the channel and causes modulation of the electrical characteristics of the FET. When the gate bias is increased above a certain voltage it results in an increase in the current conduction capability of the device.

When a voltage applied to the gate is less than the threshold voltage, the drain-source current is kept low. This is known as the cutoff mode. When the gate bias is greater than the threshold voltage, the FET acts like a closed switch. The basic operation of the current control and current sense FETs is to modulate the drain-source current and voltage to control the electrical characteristics (i.e. RDS on, on state resistance and dv/dt ratio) of the FET. The NTMFS4833NST1G FET has a wide range of applications and an excellent on-resistance, which makes it a preferred choice for many applications.

This device has a wide range of applications as it can be used to control various automotive applications such as automotive lighting, central power control, DC motors and is suitable for circuit protection. It is also used to provide surge protection and load protection. Due to its low on-resistance and high dv/dt ratio, it is also used in power electronics to reduce switching losses and improve power dissipation.

The specific data is subject to PDF, and the above content is for reference