NTMFS08N003C Discrete Semiconductor Products |
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Allicdata Part #: | NTMFS08N003COSTR-ND |
Manufacturer Part#: |
NTMFS08N003C |
Price: | $ 2.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | PTNG 80/20V IN 5X6CLIP |
More Detail: | N-Channel 80V 22A (Ta), 147A (Tc) 2.7W (Ta), 125W ... |
DataSheet: | NTMFS08N003C Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 2.10784 |
Vgs(th) (Max) @ Id: | 4V @ 310µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Power56 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.7W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5350pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 73nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 56A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 147A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTMFS08N003C is a N-channel enhancement mode Field Effect Transistor (FET). This type of transistor is unique in its ability to switch high currents with low gate-source voltages. It has a low on-resistance and is capable of withstanding large power dissipation.
The NTMFS08N003C is designed to be implemented in low voltage, low current circuits where superior performance is required. With its low on-resistance and high breakdown voltage, it is often used in DC motor drive circuits, switch mode power supplies and brushless DC motor drive circuits as well as other types of switching applications.
The NTMFS08N003C utilizes two separate power inputs, which gives it the ability to control two separate operating channels without having to switch from one device type to another. This makes the NTMFS08N003C an ideal choice for applications that require high power density and low power consumption. Additionally, the device is constructed from a single mold package, which provides enhanced thermal performance compared to conventional FETs.
The working principle behind the NTMFS08N003C is based on the FET switching mechanism. The gate-source voltage controls the current flow between the source and the drain. When the gate is turned on, the N-channel conducts current between the source and drain; when the gate is turned off, the N-channel is effectively cut off and no current flows. This makes the NTMFS08N003C ideal for applications that require an efficient way to switch between analog and digital signals.
The NTMFS08N003C is available with a wide range of drain-source voltage, gate voltage, and power levels, making it an ideal choice for applications where superior performance and reliability are necessary. It can handle high gate current without sacrificing gate oxide integrity, which makes it a great choice for high power switching applications. Additionally, the low gate threshold voltage of the NTMFS08N003C makes it ideal for applications where fast switching is a necessity.
The NTMFS08N003C is an ideal choice for a variety of applications, from low voltage, low current circuits to high power switching applications. Its low on-resistance, high breakdown voltage, and fast switching performance make it a great choice for any application where superior performance is necessary. By utilizing the FET switching mechanism, the NTMFS08N003C is capable of controlling two operating channels without having to switch from one device type to another.
The specific data is subject to PDF, and the above content is for reference
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