NTMFS4851NT1G Allicdata Electronics
Allicdata Part #:

NTMFS4851NT1G-ND

Manufacturer Part#:

NTMFS4851NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 9.5A SO-8FL
More Detail: N-Channel 30V 9.5A (Ta), 66A (Tc) 870mW (Ta), 41.7...
DataSheet: NTMFS4851NT1G datasheetNTMFS4851NT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 12V
FET Feature: --
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
Description

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N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor (NMOSFET) is one of the most common varieties of field-effect transistor used in modern electronics. It has many applications in a wide range of electronic circuits, and plays an important role in the design of power electronic systems. The NTMFS4851NT1G is one of the latest series of N-Channel MOSFETs created by Siemens.

The NTMFS4851NT1G is a single N-channel, high-strength, high-current MOSFET. It is designed to operate efficiently even under extreme temperatures, making it ideal for use in a variety of applications. It is also capable of handling peak currents up to 4 amps. The NTMFS4851NT1G has a low input capacitance which helps to reduce switching losses, as well as a high withstand voltage of 50V.

The NTMFS4851NT1G has a variety of uses, including in high power switching applications like power converters, power amplifiers, and high speed motor control. It is also used in a variety of other applications such as battery charging and power management. Additionally, it can be used in home appliances, lighting, and other consumer electronic devices.

The NTMFS4851NT1G is based on a metal-oxide-semiconductor (MOS) structure. It consists of an insulated gate which is used to control the flow of electrons or holes in the device. This insulated gate is connected to a gate terminal which is used to interact with the gate voltage. Additionally, the NTMFS4851NT1G has two source terminals, a drain terminal, and a body terminal which serves as a ground connection.

The source and the drain terminals are connected to an electrical load, and when a particular voltage is applied to the gate terminal, the current between the source and the drain terminal can be controlled. This is known as enhancement mode. When the gate voltage is turned off, the flow of current is stopped, resulting in a low-power shutoff. This is known as depletion mode.

The NTMFS4851NT1G can also be used in a variety of modern electronic designs. It can be used in power electronic circuits to regulate voltage, as well as to provide power conversion and motor control. Furthermore, it can be used in battery management systems and consumer electronics to control current and voltage.

The NTMFS4851NT1G is a reliable and powerful MOSFET, and its wide range of applications makes it a great choice for many modern electronic designs. It is capable of handling peak currents up to 4 amps, and its low input capacitance helps to reduce switching losses. Additionally, it can operate efficiently even under extreme temperatures, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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