NTMFS4839NHT1G Discrete Semiconductor Products

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The NTMFS4839NHT1G is an Common-Source N-channel MOSFET which belongs to a family of power MOSFETs used in power-switching circuits and various other applications. It is composed of an insulated gate field effect transistor with a MOS (metal–oxide–semiconductor) structure. The NTMFS4839NHT1G is split into two sections, the drain and the source, which act as the main power terminals of the device.

In order to reduce both on-state resistance and switching time, the NTMFS4839NHT1G comes with an on-die gate driver. This gate driver is placed between the source and gate of the MOSFET, allowing the gate to be driven by the on-die driver. This in turn reduces both the required gate capacitance and gate resistance, leading to improved switching performance.

The NTMFS4839NHT1G is designed for low-cost switching applications such as consumer electronics, lighting, architectural lighting and motor control. It can be used in a range of general purpose switching applications that require high efficiency and low on-state resistance. This device is suitable for use in applications where it is necessary to control the switching of high voltage and current loads. It has a wide range of applications, including DC-to-DC converters, high frequency power supplies, switched mode power supplies, motor drives and switching power adapters.

The NTMFS4839NHT1G relies on an insulated gate field effect transistor structure to both provide when the transistor is in an OFF state and avoid leakage when the transistor is ON. This switching action is achieved by applying a suitable bias to the gate, resulting in the MOSFET collector-to-drain current to reduce and be switched Off. When this occurs, the voltage bias on the MOSFET gate causes the effective channel closed to ground resulting in the transistor becoming non-conductive.

The NTMFS4839NHT1G has an output voltage range of 0V to 400V with a maximum current carrying capability of 24A and on-state resistance of 4mΩ. It is available in a package size of 0.38 inches (9.6 mm) by 1.29 inches (32.8 mm). It has a typical gate, drain and source capacitance of 0.0180, 0.0440 and 0.0238 pF, respectively.

The NTMFS4839NHT1G is a low-cost, easy to use, and reliable power MOSFET that can be used in a range of power switching applications. Due to its low on-state resistance, it can reduce the voltage drop on the device, resulting in improved efficiency and power savings. It also features an on-die gate driver that reduces both gate capacitance and gate resistance, resulting in improved switching performance.

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