NTMFS4846NT1G Allicdata Electronics

NTMFS4846NT1G Discrete Semiconductor Products

Allicdata Part #:

NTMFS4846NT1GOSTR-ND

Manufacturer Part#:

NTMFS4846NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 12.7A SO-8FL
More Detail: N-Channel 30V 12.7A (Ta), 100A (Tc) 890mW (Ta), 55...
DataSheet: NTMFS4846NT1G datasheetNTMFS4846NT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 11.5V
Series: --
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTMFS4846NT1G is a field effect transistor (FET) that is best suited as an amplifier or switch in a variety of applications. It is a unipolar, or enhancement-mode, FET that comprises one channel of silicon in its structure. This design allows the device to operate with minimal energy and provide excellent performance.

As a unipolar FET, the NTMFS4846NT1G has specific parameters that allow it to operate in different ways. Its gate is built so that it can be either negative or positive with respect to its source and drain. This means that the NTMFS4846NT1G can be operated in either enhancement or depletion mode.

In enhancement mode, the NTMFS4846NT1G acts as an amplifier with good switching speed and low capacitance. It is most effective in this configuration when a low voltage is applied to the gate, causing the transistor to open, allowing current to flow. When the voltage is high, the gate closes, blocking current flow.

This enabling and disabling makes the NTMFS4846NT1G an excellent choice when operating with small signals or varying intensities. Frequent switching is tolerated without any damage to the device due to its simple and reliable design.

In depletion mode, the NTMFS4846NT1G acts as a switch and is used mostly for digital signals. It is primarily used in the “ON” and “OFF” states and is less reliable than enhancement mode due to the possibility of damaging the device with excessive voltage.

To further increase the NTMFS4846NT1G’s versatility, its drain-to-source breakdown voltage can be controlled by applying a reverse voltage at the gate. This allows for a wide variety of operating voltages, depending on the application.

Applications for the NTMFS4846NT1G FET range from computer peripheral circuits and industrial control systems to high-power amplifiers and switch-mode power supplies. It can be used in power supplies, motor drives and telecommunications, among many other applications.

The NTMFS4846NT1G FET is relatively small and easy to use, making it an ideal choice for manual assembly. Its physical features make it a popular choice in many industries, such as automotive and biomedical.

The NTMFS4846NT1G FET is an ideal choice for a wide variety of applications due to its versatility, reliability, and durability. Its ability to operate in both enhancement and depletion modes makes it suitable for digital and analog systems. It is also capable of switching at high frequencies and can be operated with low noise levels.

Overall, the NTMFS4846NT1G FET is a reliable and versatile device that is ideal for many applications. Its simple design allows for easy use and assembly, and its durability and reliability make it an ideal choice for many different industries.

The specific data is subject to PDF, and the above content is for reference

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