Allicdata Part #: | NTMFS4854NST1G-ND |
Manufacturer Part#: |
NTMFS4854NST1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 15.2A SO-8FL |
More Detail: | N-Channel 25V 15.2A (Ta), 149A (Tc) 900mW (Ta), 86... |
DataSheet: | NTMFS4854NST1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | SO-8FL |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 900mW (Ta), 86.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4830pF @ 12V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 11.5V |
Series: | SENSEFET® |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 3.2V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15.2A (Ta), 149A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTMFS4854NST1G is a type of field effect transistor (FET). In simple terms, it is an electrically-controlled switch that can be used to turn electricity on or off. Specifically, it is a type of metal-oxide-semiconductor FET (MOSFET) called a single-gate FET, which means that it has a single voltage-controlled gate. The NTMFS4854NST1G is part of a family of transistors that includes the NTMFS4854NST2G and NTMFS4654NST1G.
The NTMFS4854NST1G is a n-channel MOSFET, meaning that it is a semiconductor device that consists of a semiconductor material with four terminals and a gate. It is constructed from a combination of metal, oxide, and a semiconductor material. The gate can be used to control the flow of electrons between the source and the drain and the thickness of the oxide layer determines how much current can be controlled; the thicker the oxide layer, the greater the current.
The NTMFS4854NST1G is designed for use in high-speed switching applications and can operate at frequencies up to 350 MHz, making it suitable for RF applications. It features a low on-resistance of just 0.51 Ω, meaning it is capable of delivering high currents with minimal power loss. It is also designed to be compatible with a wide range of package sizes, making it easy to integrate into a variety of designs.
The NTMFS4854NST1G can be used in a variety of applications, including in high-speed data transmission systems and RF applications. It is also suitable for use in power conversion and control circuits, where it can be used to switch currents and voltages with high precision and efficiency. Additionally, it can be used in radio frequency and microwave applications, where its fast switching characteristics make it particularly suitable.
The working principle of the NTMFS4854NST1G is relatively simple. When a voltage is applied to the gate, it creates a field that attracts electrons from the source to the drain. This creates a "channel" of electrons between the two terminals, allowing current to flow. By controlling the voltage applied to the gate, the flow of current can be controlled, allowing the transistor to act as a switch.
The NTMFS4854NST1G is an important component in many applications, particularly those that require high speed switching or precise control of current or voltage levels. Its combination of high performance and compatibility with a wide range of packages makes it an excellent choice for engineers and designers looking for a reliable and cost-effective solution for their applications.
The specific data is subject to PDF, and the above content is for reference
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