NTMFS5830NLT1G

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.2W (Ta), 125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5880pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	113nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.3 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	28A (Ta), 172A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to NTMFS5830NLT1G

NTMFS5830NLT1G is a single N-Channel Enhancement Mode Field-Effect Transistor (FET). It was released by STMicroelectronics, one of the world’s leading semiconductor manufacturers, to meet the demands of customers looking for high power solutions. This device is a discrete semiconductor unit designed to direct current flow with minimal power loss and minimal distortion.

Application Field of NTMFS5830NLT1G

The NTMFS5830NLT1G can be used in many different types of applications. It is suitable for a wide range of commercial, industrial, automotive and consumer applications. It is commonly used in motor control, lighting control, power supply, audio amplifiers, radio applications and many other systems. Its remarkable power capabilities and small package size make it an ideal candidate for space-constrained applications.

Features and Advantages

The NTMFS5830NLT1G offers impressive performance thanks to its efficient heat dissipation. It can control up to 200V, making it ideal for a variety of applications including high-side driving and protection switching. Additionally, minimize spike de-rating ensures reliable operation at high frequencies and low gate charge reduces power consumption. Other features include a low parasitic inductance, ultra-low on-resistance and temperature dependant RDS(on) linearity.

Working Principle of NTMFS5830NLT1G

The NTMFS5830NLT1G works by allowing a small current, known as the Gate current, to regulate the flow of a much larger current through the device. This is known as voltage control as the Gate current modulates the electrostatic field that controls the current between the drain and source. This is done by applying a voltage between the Gate and the Source. When the voltage between the Gate and Source reaches a certain threshold voltage, the device will begin conducting. The greater the voltage, the more current that can be conducted.

Conclusion

The NTMFS5830NLT1G provides a reliable, high-performance solution for many commercial, industrial, automotive and consumer applications. Its remarkable power capabilities and small size make it an ideal candidate for space-constrained applications, while its efficient heat dissipation and low power consumption ensure reliable operation at high frequencies. Its working principle revolves around the idea of voltage control, which permits a small Gate current to regulate the flow of a much larger current. This adjustable and efficient current flow is sure to make NTMFS5830NLT1G a top choice for those looking for the performance and features of a high-power FET.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description