NTMFS4927NT3G Allicdata Electronics
Allicdata Part #:

NTMFS4927NT3GOSTR-ND

Manufacturer Part#:

NTMFS4927NT3G

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 38A SO-8FL
More Detail: N-Channel 30V 7.9A (Ta), 38A (Tc) 920mW (Ta), 20.8...
DataSheet: NTMFS4927NT3G datasheetNTMFS4927NT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.09791
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 920mW (Ta), 20.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 38A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTMFS4927NT3G is a discrete power MOSFET typically used in high power applications. It was developed by Fairchild Semiconductor and is commonly used in high-end consumer electronics and industrial devices. As such, it has become an important part of the industry. In this article, we will discuss the application fields and working principles of the NTMFS4927NT3G.

The NTMFS4927NT3G is a high-performance MOSFET that is specifically designed for maximum efficiency, low total gate charge, and low output capacitance. It is suitable for a variety of high-end applications, such as automotive, light commercial, LED lighting, audio/video technology, industrial applications, and more. It is designed to perform well under high frequencies, low voltage, and high switching current environments.

The NTMFS4927NT3G is usually found in applications that require high switching speeds and power densities. It has a drain-source breakdown voltage rating of 48V, drain-source ON-resistance of 5.1 milliohms, junction-to-ambient thermal resistance of 0.35oC/W, and gate threshold voltage of 2.5V. It has a maximum continuous drain current of 110 Amps and is capable of delivering peak pulses of up to 225 Amps.

The working principle of the NTMFS4927NT3G is a function of its MOSFETs. A MOSFET is a type of transistor that utilizes the majority carriers of charge to transport current, instead of the minority carriers as in a conventional bipolar transistor. MOSFETs are typically used in digital logic circuits, where devices such as logic gates and decoders are used to control the signals sent through the circuit. The main idea behind the MOSFET is that the charge carriers present in the base region of the MOSFET are either holes or electrons, and if the right preferences in the design are achieved, the charge carriers can be used to switch on and off the source-drain current. The NTMFS4927NT3G is designed such that it offers a low Ron (drain-source ON-state resistance) and a fast rise/fall time for high frequencies, making it ideal for high-speed switching.

In addition to its main application fields and working principle discussed above, the NTMFS4927NT3G is also noted for its robustness and stability in inferior operating conditions. It is designed to have a high immunity to electrostatic discharge, high temperature, and over-voltage. It also has an increased dV/dt immunity, which means that it can handle high-frequency switching without failure. These features make the NTMFS4927NT3G suitable for various harsh and unstable environment applications such as industrial, automotive, and other power applications.

Overall, the NTMFS4927NT3G is a power MOSFET that is suitable for high-frequency, high-current applications. It has been designed with robust components such that it can handle harsh operating conditions, and it utilizes the MOSFET principle to enable high-speed and efficient switching. The NTMFS4927NT3G is widely used in automotive, audio/video, lighting, industrial, and other power applications.

The specific data is subject to PDF, and the above content is for reference

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