Allicdata Part #: | NTMFS4845NT3G-ND |
Manufacturer Part#: |
NTMFS4845NT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 13.7A SO-8FL |
More Detail: | N-Channel 30V 13.7A (Ta), 115A (Tc) 890mW (Ta), 62... |
DataSheet: | NTMFS4845NT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 11.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 3720pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 890mW (Ta), 62.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 13.7A (Ta), 115A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
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The NTMFS4845NT3G is a low-threshold enhancement-mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is intended for use in applications requiring low resistance, low-voltage operation, and wide output current ranges. The NTMFS4845NT3G can handle higher power than many other product types, allowing it to be used in a variety of applications.
Application Fields
The NTMFS4845NT3G is commonly used in consumer and industrial applications. Common consumer applications include switching power converters, digital signal processors, small signal amplifiers, analog switches, and digital logic. Industrial applications include signal conditioning, power amplifiers, digital encoder/decoders, and gate drivers.
As a low-threshold MOSFET, the NTMFS4845NT3G can handle low-voltage operation, making it suitable for a variety of automotive and battery-operated applications. It also features a wide output current range, making it suitable for applications such as power management and motor control.
Working Principle
The NTMFS4845NT3G works through the principle of an electrostatic field. When a voltage is applied to the gate terminal, an electrostatic field is created. This electrostatic field sprays electrons over the channel, making the channel conductive. This increases the resistance from source to drain, allowing current to flow in either direction, depending on the direction of the applied voltage.
This makes the NTMFS4845NT3G a suitable device for switching, amplifying, or controlling small amounts of power. By varying the voltage applied to the gate terminal, the resistance from source to drain is also varied. This allows for precise control of current levels, giving the NTMFS4845NT3G the ability to switch power on or off, amplify signals or control data rates, and increase system efficiency.
The specific data is subject to PDF, and the above content is for reference
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