Allicdata Part #: | NTMFS4C09NT1G-001-ND |
Manufacturer Part#: |
NTMFS4C09NT1G-001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 9A SO8FL |
More Detail: | N-Channel 30V 9A (Ta), 52A (Tc) 760mW (Ta) Surface... |
DataSheet: | NTMFS4C09NT1G-001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 760mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1252pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 52A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTMFS4C09NT1G-001 is a new type of power field effect transistor (FET) that is widely used in a variety of applications. It is a N-Channel enhancement mode MOSFET designed for low power, high voltage switching and low noise operation in medium-voltage applications. It is specifically designed with a high breakdown voltage of 17 V at room temperature and an on-state resistance of 2.1 Ohms, resulting in low power dissipation when used as a switch.
The NTMFS4C09NT1G-001 is composed of two main components, the N-Channel MOSFET and the Gate control, which gives it its power switching capability. The N-Channel MOSFET is a field effect transistor, which is essentially an insulated gate FET (IGFET) that uses an insulated gate to control current through an N-type semiconductor. The Gate control, on the other hand, is an integrated circuit (IC) that acts as a buffer for the gate voltage and provides protection from transient and permanent overvoltage.
A MOSFET, such as the NTMFS4C09NT1G-001, is a voltage-controlled semiconductor switch, i.e. the gate voltage can be used to control the drain current through the MOSFET. When the gate voltage is equal to the drain-source voltage, the drain current will be at a maximum, and when the gate voltage is lower than the drain-source voltage, the drain current will be at a minimum.
The NTMFS4C09NT1G-001 is typically used in medium-voltage applications such as power switching and logic level shifting, as well as for low noise, high-speed switching applications where low power is needed. It has a very low on-state resistance, which allows it to be used for high-speed switching while keeping power dissipation to a minimum. The relatively high breakdown voltage of 17 V also makes it suitable for use in applications where a higher breakdown voltage is needed than what is available in other transistor types.
Due to its low power, low noise and high-speed switching capabilities, the NTMFS4C09NT1G-001 is an ideal choice for applications that require high voltage switching, such as motor and lighting control, power supplies, communication systems and automotive applications. The relatively low cost of the NTMFS4C09NT1G-001 also makes it an attractive choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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