NTMFS4926NET1G Allicdata Electronics
Allicdata Part #:

NTMFS4926NET1G-ND

Manufacturer Part#:

NTMFS4926NET1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 44A SO8-FL
More Detail: N-Channel 30V 9A (Ta), 44A (Tc) 920mW (Ta), 21.6W ...
DataSheet: NTMFS4926NET1G datasheetNTMFS4926NET1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 920mW (Ta), 21.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1004pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NTMFS4926NET1G Application Field and Working Principle

NTMFS4926NET1G is an integrated single-channel MOSFET designed for use in power electronics solutions. It has an extremely low on-resistance, low gate charge, and high drain-source breakdown voltage. It is also ideal for motor control, voltage regulation, and DC/DC converters.

MOSFETs, or metal-oxide-semiconductor field-effect transistors, are widely used in modern circuits because of their superior switching performance. By carefully choosing MOSFETs, designers can achieve high-precision solutions with minimal power losses. The NTMFS4926NET1G is part of a family of advanced MOSFETs that offer superior performance and lower losses compared to traditional MOSFETs.

A MOSFET consists of four distinct electrodes: the source, gate, drain, and body. When the gate voltage is applied to the source/drain electrodes, an electric field is created between them. If the electric field is large enough, electrons will be forced across the insulating layer of the gate, creating a current through the MOSFET. The strength of the electric field is controlled by the gate voltage, allowing for precise control over the MOSFET’s current.

The NTMFS4926NET1G is a single-channel MOSFET, meaning that it consists of a single source/drain pair. These are coupled to a gate, which is controlled by an external gate voltage. The gate voltage acts on the electric field between the source and drain electrodes, allowing for precise control over the MOSFET’s current. The NTMFS4926NET1G offers exceptionally low on-resistance, making it suitable for high power applications where current control is needed.

The NTMFS4926NET1G is ideal for applications such as motor control, voltage regulation, and DC/DC converters. Its low on-resistance and low gate charge allow for higher efficiency and lower power losses in power electronics solutions. Additionally, its high drain-source breakdown voltage guarantees that the MOSFET can safely handle large currents without suffering damage or degraded performance.

In summary, the NTMFS4926NET1G is an integrated single-channel MOSFET designed for use in power electronics solutions. Its low on-resistance and low gate charge make it ideal for motor control, voltage regulation, and DC/DC converters. Additionally, its high drain-source breakdown voltage guarantees that it can safely handle large currents. As such, the NTMFS4926NET1G is the ideal choice for any power electronics solution that needs precise current control.

The specific data is subject to PDF, and the above content is for reference

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