NTMFS4821NT3G

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NTMFS4821NT3G Application Field and Working Principle

NTMFS4821NT3G is a single-channel enhancement mode N-type power field-effect transistor, which is manufactured by ON Semiconductor using its patented and widely adopted SuperFET ™ technology. It is widely used in situations that require high current and low on-resistance parameters and is designed for switching, linear and synchronous mode applications. Understanding its highly versatile, powerful and efficient applications and the working principle behind it can help engineers and designers make better, informed decisions when selecting the optimal device for their application.

The NTMFS4821NT3G is an N-channel field-effect transistor that is suitable for use in a variety of discrete power applications. The power device also features a low on-resistance rating of 78 milli-Ohms, making it an ideal transistor for use in power MOSFET applications. It is a low-cost device that has the ability to operate at frequencies up to 250 MHz, making it suitable for use in high voltage switch-mode power supplies, such as those employed in personal computers. In addition, because the device is able to support peak currents up to 20 A and service temperatures of up to 150°C, it can be used in a wide range of portable applications.

The NTMFS4821NT3G is designed to employ an enhancement mode operation which is best used for power MOSFET switch diagrams where the gate voltage is less than the source voltage. This helps keep the gate transistor from reaching saturation. In order to maintain this threshold, a maximum gate voltage of 5.5V is rated for optimal operation, whilst the use of gate-source clamping diodes prevents any voltage spikes from saturating the gate (commonly referred to as “shoot through”). The NTMFS4821NT3G is optimized to provide high-current operations with minimal losses.

The NTMFS4821NT3G also uses SuperFET ™ technology, a patented process that provides low R DS(ON) values and improved switching losses. The R DS(ON) feature of the device is a direct result of the active area of the die and the optimized spacer layer implementation. This is one of the main characteristics that allows higher-frequency operations to be achieved. It also has the ability to support high peak currents of up to 20 A.

The NTMFS4821NT3G also offers very low gate charge. This helps reduce switching losses, making this device suitable for use in high-frequency digital switches. The low gate-charge also helps with temperature monitoring, which is critical for applications operating at elevated temperatures, such as those found in automotive applications. This device also features a low threshold voltage and can handle up to 24 V without any degradation in performance.

With its high-current capabilities, low on-resistance, low gate charge and low threshold voltage, the NTMFS4821NT3G makes a great choice for applications requiring the combined use of both low switching frequency and high peak currents. It is also ideal for applications where size and weight are important factors and can provide designers with the added advantages of higher frequencies, reduced switching losses and the ability to operate at higher temperatures.

In summary, the NTMFS4821NT3G offers a wide range of applications, from power MOSFET switch operational current limiting to high frequency switching applications. Its ability to function properly in both high and low frequency operations makes it a desirable device for engineers looking for a solution with both low-cost and high current capabilities. Its combination of low on-resistance, low gate charge, and low threshold voltage capabilities offer further advantages to designers looking to create a cost-effective, reliable and efficient power switching solution.

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