Allicdata Part #: | NTMFD4C87NT1G-ND |
Manufacturer Part#: |
NTMFD4C87NT1G |
Price: | $ 1.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 8DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 1... |
DataSheet: | NTMFD4C87NT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 1.62288 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11.7A, 14.9A |
Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1252pF @ 15V |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) |
Description
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The NTMFD4C87NT1G transistor array is a semiconductor technology used for integrated circuits. It consists of a series of transistors, which are grouped together and arranged into an array. The NTMFD4C87NT1G transistor array is a Field Effect Transistor (FET) type technology and is one of the basic building blocks for the manufacture of integrated circuits.The FET is, by far, the most common type of transistor used in integrated circuits. This is due to its superior performance and superior power and speed characteristics. The NTMFD4C87NT1G transistor array has a unique combination of features that make it ideal for a wide range of applications.The NTMFD4C87NT1G transistor array is very small in size and can be used in a wide range of integrated circuit design, due to its small size and cost-effectiveness. The array can be used in a variety of circuit designs, such as voltage regulators, data converters, switch circuits, and low noise amplifiers. These are just a few of the many possible applications of the NTMFD4C87NT1G transistor array.The NTMFD4C87NT1G transistor array is constructed on a silicon wafer. This technology offers superior performance and power and speed characteristics due to its very small size. The array is typically configured with two transistors and a variety of n-channel, p-channel, bi-polar, and lateral transistors. The transistors are arranged into an array in order to allow for the addition of additional transistors to the array without increasing the size of the circuit.The NTMFD4C87NT1G transistor array is also known for its low leakage current and low thermal power dissipation characteristics. The FET technology of this array allows for improved switching speed and lower noise levels, making it highly suited for integrated circuit design.The NTMFD4C87NT1G transistor array is also known for its flexibility and ability to be tailored to specific customers’ needs. Its design allows it to be configured with a variety of types of transistors, including single-transistor as well as multiple-transistor arrays. This flexibility makes the array ideal for a wide range of different applications.The working principle of the NTMFD4C87NT1G transistor array is similar to other FETs, but is more compact in design and has improved performance characteristics. The FETs in the array are arranged in an alternating pattern, with the source and drain connections placed close to each other, and the body of the transistors arranged in a staggered pattern. This arrangement allows for the formation of an effective electrical field.When a voltage is applied to the NTMFD4C87NT1G transistor array, the transistors act as a gate between the source and the drain, allowing current to flow through the array. The effective electrical field of the array allows for small signals to be amplified or regulated, depending on the circuit design. This versatile array can be used in many types of circuit designs, making it highly suited for a wide range of applications.The NTMFD4C87NT1G transistor array is an ideal choice for a variety of integrated circuit designs, due to its small size, cost-effectiveness, and superior performance characteristics. This technology is highly suited for many different circuit designs, and its flexibility allows it to be used in a wide range of applications. Its design allows it to be configured to meet specific customers’ needs, making it an excellent choice for integrated circuit design.
The specific data is subject to PDF, and the above content is for reference
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