NTMFD4C87NT3G

The NTMFD4C87NT3G is a specific device that belongs to the Arrays category of Field Effect Transistors (FETs). It is a high voltage FET that can be used in different applications. This article will discuss the NTMFD4C87NT3G device and its application field, as well as its working principle, in order to provide more information and support to those who might want to use it.

The NTMFD4C87NT3G is a power FET that is available in a TO-220 package (which means it is in a tubular virtual package). It has an isolation voltage of 10kV and a blocking voltage of 700V (which makes it suitable to be used in high voltage applications). It has a low on-resistance value (25mOhm) and it is capable of sustaining up to 4.5A drain current. The FET is available in three versions: the N-Channel, the P-Channel and the Dual P-Channel. The devices are characterized for VDS from 0V to 700V and for VGS from -3V to 24V.

The NTMFD4C87NT3G can be used in different application fields, such as: high voltage power supplies, LED driving, and HV DC-DC converters. It is also suitable for high power audio amplifiers, solar inverters and other high voltage power applications. In addition, it can be used in automotive applications such as automotive lighting and driver circuitry (especially due to its high voltage and low on-resistance features).

The working principle of the NTMFD4C87NT3G is similar to that of other FETs and MOSFETs. It is a voltage-controlled device, meaning that its operation is governed by the voltage potential between the gate (G) and the source (S) terminals.When a voltage potential is applied to the gate terminal, the transistor gets activated and its drain current increases. This increase in current will result in an increase of the drain-source voltage (Vds) and of the drain-source current (Ids) flowing through the device.

In conclusion, the NTMFD4C87NT3G is a high voltage FET that can be used in different application fields, such as high power audio amplifiers, LED driving, high voltage power supplies and automotive applications. Its working principle is similar to that of other FETs and MOSFETs and it can be used in variety of applications due to its low on-resistance and high voltage properties.