NTMFD5C674NLT1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs:	14.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	640pF @ 25V
Power - Max:	3W (Ta), 37W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6) Dual Flag (SO8FL-Dual)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

NTMFD5C674NLT1G is a MOSFET array with two N channel FETs, produced by ON Semiconductor, for various general-purpose applications. It is a dual N channel FET array with a built-in anti-parallel diode, which offers designers a cost-effective solution for many circuit application needs.

Features & Benefits

The NTMFD5C674NLT1G is an integrated circuit that offers several features and benefits:

• Fast Switching: With its fast switching time, this device can operate with low power and high speed.
• Low Parasitic Capacitance: The integrated circuit has a low parasitic capacitance which helps avoid any noise or interference in the circuit.
• Voltage Range: The MOSFET array has a wide voltage range of up to 200 V, making it ideal for many different circuit types.
• Integrated Anti-Parallel Diode: The integrated anti-parallel diode provides an increased protection for the FETs in the event of a load dump or excessive load. This helps ensure the longevity of the device.
• Low RDS(on): The low RDS(on) of this device helps to minimize the power dissipated, allowing the FETs to operate with a higher efficiency.
• Low On-Resistance: The low on-resistance helps to improve system performance by ensuring that the FETs can handle the required current.
• High Power Dissipation: The integrated array has a high power dissipation which can help to improve the current handling capability of the device.

Application Field and Working Principle

The NTMFD5C674NLT1G is well suited for many different applications due to its wide voltage range and fast switching time. It can be used for power management in low voltage digital systems, such as consumer electronics, medical devices, and industrial control systems.The working principle of the NTMFD5C674NLT1G is based on the principle of the field effect transistor (FET). In a nutshell, the FET is a voltage-controlled device, meaning that a voltage applied to the gate of the FET changes the conductivity of the channel between the source and drain terminals. As the gate voltage increases, the FET turns on and conducts current between the drain and the source, allowing the circuit to switch on or off as needed. The NTMFD5C674NLT1G is a special type of FET, called a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). A MOSFET is a three-terminal device, composed of a gate, drain, and source. The gate terminal is used to control the flow of current through the channel, while the drain and source terminals allow current to flow between them. When the gate voltage is high enough, it opens up a conductive channel between the drain and source, which in turn enables current to flow from the source to the drain. This on-state is called the "channel" of the MOSFET, and it\'s this current that allows a circuit to switch on or off.The NTMFD5C674NLT1G is a dual-channel device, meaning that it can control two independent channels at once. This allows it to be used for more complex control circuits, such as a dual-power supply. The integrated anti-parallel diode helps to improve the protection of the device in the event of a load dump or excessive load. In the end, the NTMFD5C674NLT1G is a versatile MOSFET array that can be used for many different applications. Its wide voltage range, fast switching time, and integrated features make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description